Effect of Oxygen Radicals for Epitaxial Growth of Al_2O_3 on Si
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概要
- 論文の詳細を見る
Epitaxial Al_2O_3 films were grown on Si substrates by metal-organic molecular beam epitaxy (MOMBE) using oxygen radicals excited with remote rf plasma and trimethylaluminum (TMA) as source gases. The epitaxial temperature of Al_2O_3 on Si decreased from 800℃ to 700℃ using this method. The growth rate of the Al_2O_3 films increased 1.4-1.6 times at excitation rf power of 400 W, compared with that without rf plasma excitation. The Auger electron spectroscopy (AES) measurement showed that the carbon contamination in the Al_2O_3 film was removed by the oxygen radicals during the growth. The flatness of the grown Al_2O_3 surface was improved using oxygen radicals.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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Ishida M
Seiko Epson Corp. Nagano Jpn
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Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
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Nakamura Tetsuro
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
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Hayama Kiyoteru
Technology Development Center Toyohashi University Of Technology
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Nakamura Tetsuro
Department Of Colorectal Surgery Cleveland Clinic Florida
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Nakamura Tetsuro
Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Yokohama 223-8522, Japan
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