Effect of Annealing on Physical and Electrical Properties of Ultrathin Crystalline $\gamma$-Al2O3 High-$k$ Dielectric Deposited on Si Substrates
スポンサーリンク
概要
- 論文の詳細を見る
Ultrathin crystalline $\gamma$-Al2O3 films with an equivalent oxide thickness (EOT) of 1.3 nm to 2.5 nm have been fabricated on Si substrates by molecular beam epitaxy and annealed in various atmospheres at different temperatures (300–700°C). The effect of the annealing on the chemical composition, crystalline property, surface morphology and electrical properties of the ultrathin $\gamma$-Al2O3 films has been studied. An improvement in the electrical properties after annealing was observed. It was also observed that the nitrogen atoms were incorporated into the $\gamma$-Al2O3 ($\gamma$-Al2O3:N) films during annealing at higher temperatures. No detectable pits or pinholes were observed on the surfaces after annealing and the crystalline property remained unchanged during annealing.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-08-15
著者
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Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
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Sawada Kazuaki
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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SHAHJAHAN Mohammad
Department of Physics, Rajshahi University
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Okada Takayuki
Department Of Chemical And Biochemical Engineering Faculty Of Engineering Toyama University
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Sawada Kazuaki
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Japan
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Shahjahan Mohammad
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Japan
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Ishida Makoto
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Japan
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Sawada Kazuaki
Department of Electric and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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OKADA Takayuki
Department of Bio-Recycling, Faculty of Engineering, Hiroshima Kokusai Gakuin University
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Okada Takayuki
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Japan
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Sawada Kazuaki
Department of Electric and Electronic Engineering, Toyohashi University of Technology
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