Effect of Annealing on Physical and Electrical Properties of Ultrathin Crystalline γ-Al_2O_3 High-k Dielectric Deposited on Si Substrates
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-08-15
著者
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SAWADA Kazuaki
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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ISHIDA Makoto
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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OKADA Takayuki
Department of Chemical and Biochemical Engineering, Faculty of Engineeing, Toyama University
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Okada Takayuki
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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SHAHJAHAN Mohammad
Department of Physics, Rajshahi University
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