Effect of Annealing on Physical and Electrical Properties of Ultrathin Crystalline γ-Al_2O_3 High-k Dielectric Deposited on Si Substrates

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-08-15

著者

• SAWADA Kazuaki

  Department of Electrical and Electronic Engineering, Toyohashi University of Technology

• ISHIDA Makoto

  Department of Electrical and Electronic Engineering, Toyohashi University of Technology

• OKADA Takayuki

  Department of Chemical and Biochemical Engineering, Faculty of Engineeing, Toyama University

• Okada Takayuki

  Department Of Electrical And Electronic Engineering Toyohashi University Of Technology

• SHAHJAHAN Mohammad

  Department of Physics, Rajshahi University

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• Effect of Annealing on Physical and Electrical Properties of Ultrathin Crystalline $\gamma$-Al2O3 High-$k$ Dielectric Deposited on Si Substrates

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