Fabrication and Electrical Characterization of Ultrathin Crystalline Al_2O_3 Gate Dielectric Films on Si(100) and Si(111) by Molecular Beam Epitaxy : Electrical Properties of Condensed Matter

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Fabrication of ultrathin crystalline Al_2O_3 (equivalent oxide thickness (EOT) = 1.5-2 nm) on Si substrates by molecular beam epitaxy (MBE) and the electrical properties of these films were discussed. In the electrical measurements, a high breakdown field (8-10MV/cm) and extremely low leakage current density 〜 10^<-8> A/cm^2 at a field of 3 MV/cm were obtained. The dielectric constant of these films was calculated from high-frequency C-V measurement and its value was obtained to be 7.5. The interface state density (D_<it>) at the crystalline Al_2O_3/Si interface was calculated from quasi-static capacitance-voltage (C-V) measurement and its value was obtained to be 1-3 × 10^<11> eV^<-1>・cm^<-2>.
社団法人応用物理学会の論文
2002-12-15