Fabrication of Resonance Tunnel Diode by γ-Al_2O_3/Si Multiple Heterostructures
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概要
- 論文の詳細を見る
Fabrication of epitaxial γ-Al_2O_3(111)/Si(111) heterostructures with smooth surfaces for resonance tunnel diode structures is presented in this study. γ-Al_2O_3 layers were fabricated by molecular beam epitaxy (MBE) and Si layers were fabricated by a mini e-beam evaporator. Epitaxial growth and surface morphology of these layers were studied by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The obtained root mean square (RMS) values of the surface roughness of these layers were 0.39nm for γ-Al_2O_3 (3nm) on Si(111)-substrate and 0.65nm for Si (4nm) on γ-Al_2O_3/Si(111)-substrate. Conduction band offset of the γ-Al_2O_3/Si heterostructure was studied by Fowler-Nodheim tunneling current measurement, and the conduction band offset (ΔE_c) value of 2.2eV was obtained. Then, resonant tunneling diode (RTD) structures with double and triple barriers were fabricated using this γ-Al_2O_3(111)/Si(111) heterostructure. Electrical properties of these RTDS were studied to find negative differential resistance (NDR). The NDR at room temperature was observed in both structures for the first time with a peak to valley (P/V) current ratio of 3.0 for the double barrier RTD, and 4.5 for the triple barrier RTD. [DOI: 10.1143/JJAP.41.2602]
- 社団法人応用物理学会の論文
- 2002-04-30
著者
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Shahjahan Mohammad
Venture Business Laboratory Toyohashi University Of Technology
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Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
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Sawada Kazuaki
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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SHAHJAHAN Mohammad
Department of Physics, Rajshahi University
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KOJI Yoshiaki
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Koji Yoshiaki
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Shahjahan Mohammad
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Japan
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Sawada Kazuaki
Department of Electric and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Sawada Kazuaki
Department of Electric and Electronic Engineering, Toyohashi University of Technology
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