Development of Surface Morphology of Epitaxial Al_2O_3 on Silicon by Controlling Reaction between Oxygen and Silicon Surface
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概要
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Epitaxial growth of Al_2O_3 on Si has been investigated using ultrahigh-vacuum chemical vapor deposition (UHV-CVD). The uniformity of Al_2O_3 growth in a wafer was improved by UHV-CVD with a hot-wall heating system, but the surface morphology of grown films was degraded compared with that of films grown by low-pressure chemical vapor deposition (LP-CVD) with a cold-wall heating system. Using oxygen for Al_2O_3 growth instead of N_2O, crystalline quality and electrical properties of Al_2O_3 films were improved, but microroughness still exist at the Al_2O_3 surface. A new Al_2O_3 growth method is proposed taking into account thermochemical considerations. The growth temperature of Al_2O_3 was lowered at a temperature below 780℃ to improve the surface morphology. Although the surface morphology of Al_2O_3 film was improved, its crystalline structure was degraded by the low-temperature growth. Then, a high-temperature growth was performed on the Al_2O_3 layer grown at the low temperature, to recover the crystalline structure of the grown films. Using two complementary growth steps with different temperatures, the surface morphology and electrical properties of epitaxial Al_2O_3 films on Si substrates were improved.
- 社団法人応用物理学会の論文
- 1999-02-15
著者
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Ishida M
Toyohashi Univ. Technol. Toyohashi Jpn
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Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
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Kimura Takayuki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Niigata University
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Kimura Takayuki
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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KIMURA Takayuki
Department of Dermatology, Faculty of Medicine, University of Tokyo
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