The Effect of Oxidation Source Gas on Epitaxial Al_2O_3 Films on Si
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概要
- 論文の詳細を見る
Epitaxial growth of Al_2O_3 on Si has been investigated by using ultrahigh-vacuum chemical vapor deposition (UHV-CVD). Film thickness uniformity in a wafer was progressed by UHV-CVD method with a hot wall heating system, but the film surface morphology of grown films was worse than that grown by low-pressure chemical vapor deposition (LP-CVD) with a cold wall heating system. Reaction between Si surface and N_2O was carried out by LP-CVD and UHV-CVD, and it is supposed that N_2O gas etches the Si surface rather than O_2 gas at the initial growth stage in UHV-CVD. High crystalline quality of Al_2O_3 films was obtained at 1000℃ by changing the oxidation source gas from N_2O to O_2. Al_2O_3 film crystalline quality and electrical property were improved by using O_2 gas.
- 社団法人応用物理学会の論文
- 1997-12-15
著者
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KIMURA Takayuki
Department of Electrical and Electronic Engineering, Faculty of Engineering, Niigata University
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MORIYASU Yoshitaka
Department of Material Physics, Faculty of Engineering Science, Osaka University
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Kimura T
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
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Sengoku Atsuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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YAGINUMA Hideki
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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SENGOKU Atsuhiro
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Kimura Takayuki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Niigata University
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Kimura Tatsumi
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Yaginuma Hideki
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Moriyasu Yoshitaka
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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KIMURA Takayuki
Department of Dermatology, Faculty of Medicine, University of Tokyo
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