Double SOI Structures and Device Applications with Heteroepitaxial Al_2O_3 and Si
スポンサーリンク
概要
- 論文の詳細を見る
Growth and properties of a double SOI (Si-on-insulator) structure, which consists of epitaxial Al_2O_3 as an insulator layer and epitaxial Si layers, are discussed. LP-CVD (low-pressure chemical vapor deposition) for γ-Al_2O_3 (100) growth on Si(100) substrates was combined with Si CVD through a sample exchanging chamber with reflection high-energy electron diffraction (RHEED) and quadrupole mass spectrometer (QMS) to grow successively and analyzed without exposure to air. These epitaxial multilayers were characterized by RHEED, Auger electron spectroscopy (AES), cross-sectional transmissin electron microscopy (TEM) and etching method. Metal-oxide-semiconductor (MOS) field effect transistor (FET) mobility was also studied on each Si layer. Both Si layers showed similar defect density and mobility. This double SOI structure was applied to fabrication of a pressure sensor for use at elevated temperatures up to 300℃.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
-
ISHIDA Makoto
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
-
Lee Y‐t
Department Of Information & Communications Kjist
-
NAKAMURA TETSURO
Department of Pediatric Surgery, Osaka City General Hospital
-
Nakamura Tetsuro
Department Of Electrical Engineering And Electronics Toyohashi University Of Technology
-
Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
-
Lee Young-tae
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
-
Higashino Touru
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
-
Seo Heedon
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
-
Seo Heedon
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
-
Higashino Touru
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
-
Nakamura Tetsuro
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
-
Nakamura Tetsuro
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
-
Nakamura Tetsuro
Department Of Colorectal Surgery Cleveland Clinic Florida
-
Nakamura Tetsuro
Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Yokohama 223-8522, Japan
関連論文
- Electron transport in a gold nanoparticle assembly structure stabilized by a physisorbed porphyrin derivative
- Si基板上ZnSエピタキシャル薄膜のZnOへの酸化過程
- Si基板上ZnSエピタキシャル薄膜のZnOへの酸化過程(発光型・非発光型ディスプレイ合同研究会)
- ハライドVPEによる紫外発光ZnO薄膜の作製
- ハライドVPEによる紫外発光ZnO薄膜の作製
- Si基板上ZnSエピタキシャル薄膜のZnOへの酸化過程
- Low-Noise Fully Differential Amplifiers Using JFET-CMOS Integration Technology for Smart Sensors
- Neo-Transmitter Using Pulse Width Modulation (PWM) Method for Wireless Smart Sensors
- Study of π^+π^- Pair Production in a Two-Photon Process at TRISTAN : VENUS Collaboration
- 4-3 多元蒸着法により作製したSrGa_2S_4 : Ce薄膜の構造及び発光特性
- 多元蒸着法による青色発光SrGa_2S_4 : Ce薄膜の作製
- 多元蒸着法による青色発光SrGa_2S_4:Ce薄膜の作製
- 5)ZnS : Tm, F薄膜の電荷補償(情報ディスプレイ研究会)
- Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source
- Multi-Coil System for Electron Cyclcotron Resonance Plasma Generation
- Uniform Electron Cyclotron Resonance Plasma Generation for Precise ULSI Patterning
- Dependence of Electron Cyclotron Resonance Plasma Characteristics on Introduced Microwave Conditions
- 電気化学析出法による非晶質酸化ビスマス薄膜の作製
- AP-HCVD法により作製したσ-Bi_2O_3薄膜へのガス供給の影響と表面モフォロジー
- 17aD01 大気圧ハライド気相成長法によるYSZ(111)基板上へのδ-Bi_2O_3薄膜の作製(結晶成長基礎(1),第35回結晶成長国内会議)
- 大気圧ハライド気相成長法によるδ-Bi2O3薄膜の作製と薄膜構造評価用X線回折装置による結晶性評価
- 薄膜化プロセスにより実現した室温で安定な螢石型酸化ビスマスの作製
- オプトアジレント機能を有する金属窒化物薄膜の創製--金属窒化物薄膜の不思議な機能
- ユーロピウムをドープした青色および緑色発光アルミン酸塩のEPR評価
- ユーロピウムをドープした青色および緑色発光アルミン酸塩のEPR評価
- 低電圧駆動ディスプレイ用微粒子蛍光体の合成
- 中速電子線励起における導電性被覆蛍光体の寿命特性
- 低電圧駆動ディスプレイ用微粒子蛍光体の合成
- 中速電子線励起における導電性被覆蛍光体の寿命特性
- SrTiO_3:Pr, Al赤色蛍光体のCL特性に対するAl添加効果
- SrTiO_3:Pr, Al赤色蛍光体のCL特性に対するAl添加効果
- ゾル-ゲル法により導電処理した蛍光体の低速電子線励起発光特性
- 赤色発光SrTiO_3:PrAl蛍光体におけるAl添加効果
- ゾルーゲル法により導電処理した蛍光体の低速電子線励起発光
- Preparation of aluminum oxide films at low temperatures by a hot wall technique
- 常磁性共鳴における新しい展開
- Dependence of Cathodoluminescent and Electrical Properties of Phosphors with Conducting Layer by Sol-Gel Method on Layer Thickness
- Improvement of Low Voltage Cathodoluminescent Properties of Zinc Sulfide Phosphors by Sol-Gel Method
- Red Electroluminescent Devices Using Mn-Doped CdS(Se)- and CdTe-ZnS Superlattices
- ZnS:Mn Electroluminescent Films Prepared by Hot Wall Technique
- Traumatic mesenteric bleeding managed solely with transcatheter embolization
- Field Electron Emission from Silicon Nanoprotrusions : Surfaces, Interfaces, and Films
- Improvement of Metal-Oxide Semiconductor Interface Characteristics in Complementary Metal-Oxide Semiconductor on Si(111) by Combination of Fluorine Implantation and Long-Time Hydrogen Annealing
- The Characteristic Improvement of Si(111) Metal-Oxide-Semiconductor Field-Effect Transistor by Long-Time Hydrogen Annealing
- Fabrication of JFET device on Si (111) for sensor interface array circuit
- Signal Conditioning CMOS Circuits Integrated on Si (111) for Image-Recording Sensor of Neural Activity
- 18-1 低速電子線励起時における蛍光体表面の電位変化
- 14)蛍光体へ被覆した導電層の膜厚と低速電子線励起発光に関する考察(情報ディスプレイ研究会)
- 蛍光体表面の改質による低速電子励起発光特性の向上
- 蛍光体へ被覆した導電層の膜厚と低速電子線励起発光に関する考察
- 蛍光体へ被覆した導電層の膜厚と低速電子線励起発光に関する考察
- 4-5 低速電子線励起における蛍光体の発光特性の改善
- 15)ゾル-ゲル法による蛍光体の被覆状態と発光特性の変化(情報ディスプレイ研究会 : 発光型/非発光型ディスプレイ合同研究会)
- ゾル-ゲル法による蛍光体の被覆状態と発光特性の変化
- ゾルーゲル法による蛍光体の被覆状態と発光特性の変化
- 遷移金属付活Ga_2O_3薄膜の製法と構造及び発光特性
- 遷移金属付活Ga_2O_3薄膜の製法と構造及び発光特性
- Spontaneous Polarization and Piezoelectric Effects on Inter-Subband Scattering Rate in Wurtzite GaN/AlGaN Quantum-Well : Optics and Quantum Electronics
- Screening Effects on Electron-Longitudinal Optical-Phonon Intersubband Scattering in Wide Quantum Well and Comparison with Experiment
- ZnS:Tm,F薄膜の電荷補償 : 発光型ディスプレイ関連 : 情報ディスプレイ
- ZnS:Tm薄膜ELの電荷補償と発光特性
- Microwave Dielectric Characteristics of Ilmenite-Type Titanates with High Q Values ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Contact Structure for a Superconducting Field Effect Transistor Using SrTiO_3/YBa_2Cu_3O_ Films
- In Situ Surface Characterization of SrTiO_3(100)Substrates for Well-defined SrTiO_3 and YBa_2Cu_3O_ Thin Film Growth
- In Situ Surface Characterization of YBa_2Cu_3O_ Thin Films Grown by Pulsed Laser Deposition
- ZnS:Cu,Br蛍光体中の不純物準位
- オキソチタニウムフタロシアニンの結晶多形とそれらを用いた電子写真感光体
- Indium Doped nMOSFETs and Buried Channel pMOSFETs with n^+ Polysilicon Gate
- Channel Doping Engineering with Indium as an Alternative p-Type Dopant
- ZnS:Mn薄膜の作製とその評価 (超薄膜--その機能と制御)
- 常磁性共鳴によるII-VI化合物薄膜および超格子材料の局所歪
- Eu付活アルミン酸ストロンチウム蛍光体の残光特性に及ぼす共付活希土類イオンの影響
- Does the Macrostructure of Deoxyribonucleic Acid Molecules Adsorbed on Substrates by the Pulse Injection Method Reflect That in Solution?
- Real Space Observation of Double-Helix DNA Structure Using a Low Temperature Scanning Tunneling Microscopy
- Development of Radio Frequency Transmitters Including On-chip Antenna for Intelligent Human Sensing Systems
- Reaction Mechanism of Alkoxy Derivatives of Titanium Diketonates as Source Molecules in Liquid Source Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO_3 Films : A Study by In Situ Infrared Absorption Spectroscopy
- Prognostic Factors and Proliferative Activities in Breast Cancer. A Comparative Study between Recurrent and Non-Recurrent Cases of Human Breast Carcinomas
- Catheter Enterostomy and Patch Repair of the Abdominal Wall for Gastroschisis with Intestinal Atresia : Report of a Case
- Diagnostic criteria of primary osteoporosis
- Temperature Dependence of Desorption in Highly Photo-Excited CdS
- Excess Noise Characteristics of Hydrogenated Amorphous Silicon p-i-n Photodiode Films
- Excess Noise Characteristics of a-Si:H p-i-n Photodiode Films
- Excess Noise Characteristics of Hydrogenated Amorphous Silicon Avalanche Photodiode Films Using Functionally Graded Structure
- Excess Noise Characteristics of a-Si:H Avalanche Photodiode Films Using Functionally Graded Structure
- Highly sensitive quantification of vancomycin in plasma samples using liquid chromatography-tandem mass spectrometry and oral bioavailability in rats
- A Case of Retroperitoneal Schwannoma Difficult to Diagnose Preoperatively
- Realization of In Situ Doped n-Type and p-Type Si-Microprobe Array by Selective Vapor-Liquid-Solid (VLS) Growth Method
- Realization of n-type and p-type Si-Microprobe Array Using In-Situ Doping with Selective Vapor-Liquid-Solid (VLS) Growth Method
- Multiplication Characteristics of a-Si:H p-i-n Photodiode Film in High Electric Field
- Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's
- Pulsed-Laser Induced Desorption in GaAs :A Dynamic Pulse Mass Counting Study
- Evaluation of Diabetic Nephropathy by Doppler Color Flow Imaging
- Fiber-Optic Separation and Compression of Gain-Switched Multimode Semiconductor Laser Pulses
- A Fused pH and Fluorescence Sensor Using the Same Sensing Area
- Fabrication of Crystalline HfO_2 High-κ Dielectric Films Deposited on Crystalline γ-Al_2O_3 Films
- Effect of Annealing on Physical and Electrical Properties of Ultrathin Crystalline γ-Al_2O_3 High-k Dielectric Deposited on Si Substrates
- Properties and Mechanism of Si Selective Epitaxial Growth on Al_2O_3 using Electrom Beam Irradiation
- Double SOI Structures and Device Applications with Heteroepitaxial Al_2O_3 and Si
- Multichannel 5 × 5-Site 3-Dimensional Si Microprobe Electrode Array for Neural Activity Recording System
- Dielectric Behavior of (1-x)LaAlO_3-xSrTiO_3 Solid Solution System at Microwave Frequencies