The Characteristic Improvement of Si(111) Metal-Oxide-Semiconductor Field-Effect Transistor by Long-Time Hydrogen Annealing
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-10-15
著者
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KATO YOSHIKO
Department of Bacteriology, Osaka City University Medical School
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TAKAO Hidekuni
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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SAWADA Kazuaki
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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ISHIDA Makoto
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Kato Yoshiko
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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