Properties and Mechanism of Si Selective Epitaxial Growth on Al_2O_3 using Electrom Beam Irradiation
スポンサーリンク
概要
- 論文の詳細を見る
Si films were selectively grown on non-electron-beam-irradiated areas of (011^^-2) and (0001)α-Al_2O_3 substrates and (100)γ-Al_2O_3 on (100)Si structures by Si_2H_6 gas-source molecular beam epitaxy (MBE) at growth temperatures from 700℃ to 900℃. Si layers were not deposited on the areas exposed to an electron beam dose of more than 1.0×10^<16> electrons/cm^2 using an electron-beam graphicsystem. The irradiated surface of Al_2O_2 substrates was changed from the original surface to an oxygen-reduced surface. Most of the O atoms on the surface were removed at electron dose densities of more than 1×10^<16> electrons/cm^2, which agrees with the critical dose density for selective epitaxy. X-ray photoelectron spectroscopy (XPS) spectra also showed that the surface consisted of metal like Al instead of crystalline Al_2O_3 after irradiation. The driving force of selective epitaxy can be considered to be the amorphous surface formed by electron irradiation.
- 社団法人応用物理学会の論文
- 1993-06-15
著者
-
ISHIDA Makoto
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
-
Fujita Masato
Kofu Operation Of Semiconductor And Integrated Circuits Division Hitachi Ltd.
-
TOMITA Takashi
Department of Pharmacy, Tsukuba University Hospital
-
NAKAMURA TETSURO
Department of Pediatric Surgery, Osaka City General Hospital
-
Nakamura Tetsuro
Department Of Electrical Engineering And Electronics Toyohashi University Of Technology
-
Tomita Takashi
Department Of Medical Entomology National Institute Of Infectious Diseases
-
Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
-
FUJITA Masahiko
Department of Electric and Electronic Engineering, Toyohashi University of Technology
-
Fujita M
Shizuoka Univ. Shizuoka Jpn
-
Nakamura Tetsuro
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
-
Ishida Makoto
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
-
Tomita Takashi
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
-
Nakamura Tetsuro
Department Of Colorectal Surgery Cleveland Clinic Florida
-
Nakamura Tetsuro
Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Yokohama 223-8522, Japan
-
NAKAMURA Tetsuro
Department of Electric and Electronic Engineering, Toyohashi University of Technology
関連論文
- Electron transport in a gold nanoparticle assembly structure stabilized by a physisorbed porphyrin derivative
- Si基板上ZnSエピタキシャル薄膜のZnOへの酸化過程
- Si基板上ZnSエピタキシャル薄膜のZnOへの酸化過程(発光型・非発光型ディスプレイ合同研究会)
- ハライドVPEによる紫外発光ZnO薄膜の作製
- ハライドVPEによる紫外発光ZnO薄膜の作製
- Si基板上ZnSエピタキシャル薄膜のZnOへの酸化過程
- Low-Noise Fully Differential Amplifiers Using JFET-CMOS Integration Technology for Smart Sensors
- Neo-Transmitter Using Pulse Width Modulation (PWM) Method for Wireless Smart Sensors
- Study of π^+π^- Pair Production in a Two-Photon Process at TRISTAN : VENUS Collaboration
- 4-3 多元蒸着法により作製したSrGa_2S_4 : Ce薄膜の構造及び発光特性
- 多元蒸着法による青色発光SrGa_2S_4 : Ce薄膜の作製
- 多元蒸着法による青色発光SrGa_2S_4:Ce薄膜の作製
- 5)ZnS : Tm, F薄膜の電荷補償(情報ディスプレイ研究会)
- Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source
- Multi-Coil System for Electron Cyclcotron Resonance Plasma Generation
- Uniform Electron Cyclotron Resonance Plasma Generation for Precise ULSI Patterning
- Dependence of Electron Cyclotron Resonance Plasma Characteristics on Introduced Microwave Conditions
- 電気化学析出法による非晶質酸化ビスマス薄膜の作製
- AP-HCVD法により作製したσ-Bi_2O_3薄膜へのガス供給の影響と表面モフォロジー
- 17aD01 大気圧ハライド気相成長法によるYSZ(111)基板上へのδ-Bi_2O_3薄膜の作製(結晶成長基礎(1),第35回結晶成長国内会議)
- 大気圧ハライド気相成長法によるδ-Bi2O3薄膜の作製と薄膜構造評価用X線回折装置による結晶性評価
- 薄膜化プロセスにより実現した室温で安定な螢石型酸化ビスマスの作製
- オプトアジレント機能を有する金属窒化物薄膜の創製--金属窒化物薄膜の不思議な機能
- ユーロピウムをドープした青色および緑色発光アルミン酸塩のEPR評価
- ユーロピウムをドープした青色および緑色発光アルミン酸塩のEPR評価
- 低電圧駆動ディスプレイ用微粒子蛍光体の合成
- 中速電子線励起における導電性被覆蛍光体の寿命特性
- 低電圧駆動ディスプレイ用微粒子蛍光体の合成
- 中速電子線励起における導電性被覆蛍光体の寿命特性
- SrTiO_3:Pr, Al赤色蛍光体のCL特性に対するAl添加効果
- SrTiO_3:Pr, Al赤色蛍光体のCL特性に対するAl添加効果
- ゾル-ゲル法により導電処理した蛍光体の低速電子線励起発光特性
- 赤色発光SrTiO_3:PrAl蛍光体におけるAl添加効果
- ゾルーゲル法により導電処理した蛍光体の低速電子線励起発光
- Preparation of aluminum oxide films at low temperatures by a hot wall technique
- 常磁性共鳴における新しい展開
- Dependence of Cathodoluminescent and Electrical Properties of Phosphors with Conducting Layer by Sol-Gel Method on Layer Thickness
- Improvement of Low Voltage Cathodoluminescent Properties of Zinc Sulfide Phosphors by Sol-Gel Method
- Red Electroluminescent Devices Using Mn-Doped CdS(Se)- and CdTe-ZnS Superlattices
- ZnS:Mn Electroluminescent Films Prepared by Hot Wall Technique
- Traumatic mesenteric bleeding managed solely with transcatheter embolization
- Field Electron Emission from Silicon Nanoprotrusions : Surfaces, Interfaces, and Films
- Improvement of Metal-Oxide Semiconductor Interface Characteristics in Complementary Metal-Oxide Semiconductor on Si(111) by Combination of Fluorine Implantation and Long-Time Hydrogen Annealing
- The Characteristic Improvement of Si(111) Metal-Oxide-Semiconductor Field-Effect Transistor by Long-Time Hydrogen Annealing
- Fabrication of JFET device on Si (111) for sensor interface array circuit
- Signal Conditioning CMOS Circuits Integrated on Si (111) for Image-Recording Sensor of Neural Activity
- 18-1 低速電子線励起時における蛍光体表面の電位変化
- 14)蛍光体へ被覆した導電層の膜厚と低速電子線励起発光に関する考察(情報ディスプレイ研究会)
- 蛍光体表面の改質による低速電子励起発光特性の向上
- 蛍光体へ被覆した導電層の膜厚と低速電子線励起発光に関する考察
- 蛍光体へ被覆した導電層の膜厚と低速電子線励起発光に関する考察
- 4-5 低速電子線励起における蛍光体の発光特性の改善
- 15)ゾル-ゲル法による蛍光体の被覆状態と発光特性の変化(情報ディスプレイ研究会 : 発光型/非発光型ディスプレイ合同研究会)
- ゾル-ゲル法による蛍光体の被覆状態と発光特性の変化
- ゾルーゲル法による蛍光体の被覆状態と発光特性の変化
- 遷移金属付活Ga_2O_3薄膜の製法と構造及び発光特性
- 遷移金属付活Ga_2O_3薄膜の製法と構造及び発光特性
- ZnS:Tm,F薄膜の電荷補償 : 発光型ディスプレイ関連 : 情報ディスプレイ
- ZnS:Tm薄膜ELの電荷補償と発光特性
- Microwave Dielectric Characteristics of Ilmenite-Type Titanates with High Q Values ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Contact Structure for a Superconducting Field Effect Transistor Using SrTiO_3/YBa_2Cu_3O_ Films
- Use of Sample Hematocrit Value to Correct Blood Tacrolimus Concentration Derived by Microparticle Enzyme Immunoassay(Highlighted paper selected by Editor-in-chief,Miscellaneous)
- Development of Radio Frequency Transmitters Including On-chip Antenna for Intelligent Human Sensing Systems
- Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits Based on P^-/P^- Thin-Film Epitaxial Silicon Wafers
- 53. Acute and Chronic Subdural Hematoma, Especially on Its Treatment
- Prognostic Factors and Proliferative Activities in Breast Cancer. A Comparative Study between Recurrent and Non-Recurrent Cases of Human Breast Carcinomas
- Dependence of Warpage of Czochralski-Grown Silicon Wafers on Oxygen Concentration and Its Application to MOS Image-Sensor Device
- Catheter Enterostomy and Patch Repair of the Abdominal Wall for Gastroschisis with Intestinal Atresia : Report of a Case
- Diagnostic criteria of primary osteoporosis
- Temperature Dependence of Desorption in Highly Photo-Excited CdS
- Excess Noise Characteristics of Hydrogenated Amorphous Silicon p-i-n Photodiode Films
- Excess Noise Characteristics of a-Si:H p-i-n Photodiode Films
- Excess Noise Characteristics of Hydrogenated Amorphous Silicon Avalanche Photodiode Films Using Functionally Graded Structure
- Excess Noise Characteristics of a-Si:H Avalanche Photodiode Films Using Functionally Graded Structure
- Highly sensitive quantification of vancomycin in plasma samples using liquid chromatography-tandem mass spectrometry and oral bioavailability in rats
- A Case of Retroperitoneal Schwannoma Difficult to Diagnose Preoperatively
- Realization of In Situ Doped n-Type and p-Type Si-Microprobe Array by Selective Vapor-Liquid-Solid (VLS) Growth Method
- Realization of n-type and p-type Si-Microprobe Array Using In-Situ Doping with Selective Vapor-Liquid-Solid (VLS) Growth Method
- Multiplication Characteristics of a-Si:H p-i-n Photodiode Film in High Electric Field
- Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's
- 日本のイエバエ自然集団における多因子的な性決定様式〔英文〕
- A-88. Operative Method of Hypertensive Intracerebral Hemorrhage
- False Positive Blood Tacrolimus Concentration in Microparticle Enzyme Immunoassay
- Expression of two acetylcholinesterase genes from organophosphate sensitive- and insensitive-houseflies, Musca domestica L. (Diptera: Muscidae), using a baculovirus insect cell system
- Differential tissue distribution of two acetylcholinesterase transcripts in the German cockroach, Blattella germanica
- Pulsed-Laser Induced Desorption in GaAs :A Dynamic Pulse Mass Counting Study
- Biochemical properties of recombinant acetylcholinesterases with amino acid substitutions in the active site
- cDNA identification and gene expression of two types of acetylcholinesterases in a cultured cell line of Aedes albopictus, compared to mosquito whole body extracts
- cDNA and deduced protein sequence of acetylcholinesterase from the diamondback moth, Plutella xylostella (L.) (Lepidoptera : Plutellidae)
- Polymorphism in the acetylcholinesterase gene of the housefly, Musca domestica L. (Diptera:Muscidae)
- Evaluation of Diabetic Nephropathy by Doppler Color Flow Imaging
- A Fused pH and Fluorescence Sensor Using the Same Sensing Area
- Gatifloxacin Induces Augmented Insulin Release and Intracellular Insulin Depletion of Pancreatic Islet Cells(Highlighted paper selected by Editor-in-chief,Molecular and Cell Biology)
- Fabrication of Crystalline HfO_2 High-κ Dielectric Films Deposited on Crystalline γ-Al_2O_3 Films
- Effect of Annealing on Physical and Electrical Properties of Ultrathin Crystalline γ-Al_2O_3 High-k Dielectric Deposited on Si Substrates
- Properties and Mechanism of Si Selective Epitaxial Growth on Al_2O_3 using Electrom Beam Irradiation
- 106. Three interesting Cases of Brain Tumor Suspect. : Pseudohypoparathyroidism, Schilder's Disease ana Kuff's Disease
- Double SOI Structures and Device Applications with Heteroepitaxial Al_2O_3 and Si
- Multichannel 5 × 5-Site 3-Dimensional Si Microprobe Electrode Array for Neural Activity Recording System
- Dielectric Behavior of (1-x)LaAlO_3-xSrTiO_3 Solid Solution System at Microwave Frequencies