Improvement of Metal-Oxide Semiconductor Interface Caracteristics in Complementary Metal-Oxide Semiconductor on Si(111) by Combination of Fluorine Implantation and Long-Time Hydrogen Annealing

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文

著者

• Kato Yoshiko

  Department Of Electrical And Electronic Engineering Toyohashi University Of Technology

関連論文

• Improvement of Metal-Oxide Semiconductor Interface Characteristics in Complementary Metal-Oxide Semiconductor on Si(111) by Combination of Fluorine Implantation and Long-Time Hydrogen Annealing
• Improvement of Metal-Oxide Semiconductor Interface Caracteristics in Complementary Metal-Oxide Semiconductor on Si(111) by Combination of Fluorine Implantation and Long-Time Hydrogen Annealing
• The Characteristic Improvement of Si(111) Metal-Oxide-Semiconductor Field-Effect Transistor by Long-Time Hydrogen Annealing
• Fabrication of JFET device on Si (111) for sensor interface array circuit
• Signal Conditioning CMOS Circuits Integrated on Si (111) for Image-Recording Sensor of Neural Activity

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