The Characteristic Improvement of Si (111) Metal–Oxide–Semiconductor Field-Effect Transistor by Long-Time Hydrogen Annealing
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概要
- 論文の詳細を見る
In this study, the characteristic improvement of Si (111) metal–oxide–semiconductor field-effect transistor (MOSFET) by decreasing the interface states has been investigated. As a process step for this characteristic improvement, long-time annealing in hydrogen ambient was performed after complementary MOS (CMOS) fabrication. It is found from the evaluated results that the interface state density of the Si (111) MOS structure decreases markedly upon increasing the annealing time. Furthermore, the $S$-factor and mobility of (111) MOSFETs were improved markedly. In particular, the field effect mobility of a (111) p-MOSFET was higher than that of a (100) p-MOSFET in spite of its possessing large interface states. It has been experimentally confirmed for the first time that long-time hydrogen annealing is an essential and effective process for the fabrication of (111) MOSFETs with a standard Si–SiO2 system.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-10-15
著者
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KATO YOSHIKO
Department of Bacteriology, Osaka City University Medical School
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Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
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Takao Hidekuni
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Sawada Kazuaki
Department of Electric and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Ishida Makoto
Department of Electric and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Kato Yoshiko
Department of Electric and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Takao Hidekuni
Department of Electric and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Sawada Kazuaki
Department of Electric and Electronic Engineering, Toyohashi University of Technology
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Takao Hidekuni
Department of Electric and Electronic Engineering, Toyohashi University of Technology
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