Multiwavelength Photosensor for On-Chip Real-Time Monitoring of Fluorescence and Turbidity
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概要
- 論文の詳細を見る
In this paper, we report simultaneous detection of fluorescence and turbidity using a multiwavelength photosensor. The multiwavelength photosensor is fabricated in a 5 μm 1-poly 1-metal p-well complementary metal oxide semiconductor (CMOS) technology. First, to confirm the basic characteristics of the multiwavelength photosensor, the linearity of irradiated intensity and photocurrent, fluorescence detection capability, and turbidity detection capability were separately observed. Then, in the fluorescence detection measurement using a fluorescent dye, a detection limit of DNA concentration of 49.8 nM was determined. Then, the turbidity detection performance was compared with that of a Si photodiode. Finally, the sensor was used for real-time monitoring of DNA amplification using the loop-mediated isothermal amplification (LAMP) method. Owing to its multiwavelength detection, simultaneous changes in fluorescence and turbidity were successfully observed using a single sensor.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-06-25
著者
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Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
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Sawada Kazuaki
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Sawada Kazuaki
Department of Electric and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Maruyama Yuki
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Maruyama Yuki
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Sawada Kazuaki
Department of Electric and Electronic Engineering, Toyohashi University of Technology
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