Difference of Si Selective Growth on Al_2O_3 and SiO_2 Substrates by Electron Beam Irradiation Method
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概要
- 論文の詳細を見る
Based on a proposed growth model of Si selective epitaxy on Al_2O_3, the selective epitaxy of Si on both Al_2O_3 and SiO_2/Si substrates was investigated. It is clarified that the incubation time for the Si growth on Al_2O_3 depends on electron dose density and growth conditions. The incubation time increased with increasing electron dose density from 10^<15> to 10^<18> electrons/cm^2. Thickness of the selectively grown layer is determined by taking the product of the growth rate and the incubation time difference. Selective Si deposition on SiO_2/Si substrates was studied using an electron-beam irradiation method, because SiO_2 is also the oxide material as Al_2O_3, and the same phenomena could be expected from our proposed mechanism. It was confirmed that the selective growth of Si was possible on the SiO_2/Si substrate modified by electron beam irradiation. However, Si deposition on SiO_2 occurred on the irradiated area, in contrast to the case of Si on Al_2O_3.
- 社団法人応用物理学会の論文
- 1995-08-30
著者
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Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
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Nakamura Tetsuro
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
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TAYANAKA Hirosi
Department of Electric and Electronic Engineering, Toyohashi University of Technology
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YANAGIYA Shunichi
Department of Electric and Electronic Engineering, Toyohashi University of Technology
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Tayanaka Hirosi
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
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Yanagiya Shunichi
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
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Nakamura Tetsuro
Department Of Colorectal Surgery Cleveland Clinic Florida
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Nakamura Tetsuro
Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Yokohama 223-8522, Japan
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