Current–Voltage Characteristics of $\gamma$-Al2O3/epi-Si Resonant Tunneling Diodes with Different Quantum Well Thicknesses

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概要

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• The fabrication of double-barrier resonant tunneling diodes (DBRTDs) using $\gamma$-Al2O3/epitaxial-Si heterostructures with different well thicknesses and different barrier thicknesses was studied. Current–voltage characteristics of the DBRTDs were investigated to determine the relationships between the peak-to-valley current ratio and the quantum well thickness, and between the peak current density and the barrier thickness for the maximum peak-to-valley current ratio (PVCR) at room temperature. In this study, we confirmed a maximum peak-to-valley current ratio of 26 at room temperature with a quantum well (epi-Si) thickness of 3 nm and a barrier ($\gamma$-Al2O3) thickness of 2 nm. A comparison between the theoretical and experimental peak voltage positions for a negative differential resistance was performed, indicating good agreement. A lower peak current density of few mA/cm2 was obtained.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-07-15

著者

• Mosammat Halima

  Department Of Electrical And Electronic Engineering Toyohashi University Of Technology

• Ishida Makoto

  Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University

• Shahjahan Mohammad

  Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Japan

• Shahjahan Mohammad

  Department of Physics, Rajshahi University, Rajshahi-6205, Bangladesh

• Sawada Kazuaki

  Department of Electric and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan

• Ito Ryoki

  Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan

• Mosammat Halima

  Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan

• Sawada Kazuaki

  Department of Electric and Electronic Engineering, Toyohashi University of Technology

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