Fabrication of Si/Al2O3/Si Silicon on Insulator Structures Grown by Ultrahigh-Vacuum CVD Method
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概要
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A double-heteroepitaxial Si/γ-Al2O3/Si structure was fabricated for the first time by ultrahigh-vacuum chemical vapor deposition (UHV-CVD). An epitaxial γ-Al2O3(100) layer was grown on a Si(100) substrate with Al(CH3)3 and N2O gases at substrate temperatures of 850–1000°C. Subsequently, an epitaxial Si(100) layer was also grown on a γ-Al2O3(100)/Si(100) substrate by UHV-CVD with Si2H6 gas at substrate temperatures of 750–950°C. These epitaxial layers were characterized by reflection high-energy electron diffraction (RHEED), scanning electron microscopy (SEM), Auger electron spectroscopy (AES), cross-sectional transmission electron microscopy (TEM), Hall effect measurement and ellipsometry. The reflection high-energy electron diffraction of the 5000-Å-thick silicon epitaxial layer indicated streaked 2×1 patterns. From these results, the UHV-CVD method is proven to be an effective method for Al2O3 and silicon growth at low growth temperatures, yielding uniform film thickness and good crystalline quality.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Kimura T
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
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Sengoku Atsuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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SENGOKU Atsuhiro
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Kimura Takayuki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Niigata University
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KIMURA Takayuki
Department of Dermatology, Faculty of Medicine, University of Tokyo
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