Low-Temperature Formation of β-Type Silicon Carbide by Jon-Beam Mixing
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概要
- 論文の詳細を見る
This paper reports on the ion mixing of a carbon-silicon system induced by the Ar-ion bombardment of carbon layers deposited by an arc-discharge on single-crystalline silicon substrates. A study using infrared absorption spectroscopy has shown that a disordered carbon-silicon mixture can be obtained immediately after bombardment and that subsequent annealing causes the formation of a crystalline β-type silicon carbide phase at about 800℃. The formation temperature is lower by about 100℃ than that for carbon-silicon mixed layers formed by the direct implantation of carbon ions into silicon substrates. Argon-ion bombardment, itself, is found to play an important role in a reduction of the formation temperature.
- 社団法人応用物理学会の論文
- 1985-12-20
著者
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Kawamura Akira
Department of Cardiology, Faculty of medicine, Fukuoka University
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Kawamura Akira
Department Of Cardiology Fukuoka University Faculty Of Medicine
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Kimura T
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kimura Tadamasa
Department of Electronics Engineering, University of Electro-Communications
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Kimura Tadamasa
Department Of Applied Electronics The University Of Electro-communications
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Yugo Shigemi
Department of Electronics, Faculty of Electro-comunications, The University of Electro-Communication
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YUGO Shigemi
University of Electro-Communications
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Yugo S
Univ. Electro‐communications Tokyo
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Yugo Shigemi
Department Of Applied Electronics The University Of Electro-communications
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ADACHI Yoshio
Department of Applied Electronics, University of Electro-Communications
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TATEBE Yuki
Department of Applied Electronics, Faculty of Electro-Communications, University of Electro-Communic
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Tatebe Yuki
Department Of Applied Electronics Faculty Of Electro-communications University Of Electro-communicat
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Adachi Y
Yokohama National Univ. Yokohama Jpn
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Kawamura Akira
Department Of Applied Electronics Faculty Of Electro-communications University Of Electro-communicat
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