Formation of Very Thin Epitaxial Al_2O_3 Pre-layer with Very Smooth Surface on Si (111) Using a Protective Oxide Layer
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概要
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We propose the formation of an Al_2O_3 pre-layer using a protective Si-oxide layer and an Al layer. Deposition of a thin layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at 800℃ led to the growth of Al_2O_3 layers on Si (111). A very smooth and uniform Al_2O_3 (111) pre-layer film was epitaxially grown on a Si (111) substrate. The surface of the γ-Al_2O_3 film grown on the Al_2O_3 pre-layer was very smooth with a Z range of 〜3 nm. However, the surface grown without the Al_2O_3 pre-layer had numerous convex structures concerning with SiO_x clusters with a Z range of 〜10 nm. Etching of the Si substrate by N_2O gas could be avoided in the initial growth stage by the Al_2O_3 pre-layer. It was confirmed that the Al_2O_3 pre-layer was effective in improving the surface morphology of the very thin γ-Al_2O_3 films.
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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Miura Hiroyuki
Department Of Natural History Sciences Faculty Of Science Hokkaido University
-
Jung Young-chul
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
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Miura H
Fixed Prosthodontics Department Of Restorative Sciences Graduate School Tokyo Medical And Dental Uni
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Miura Hiroyuki
Department Of Civil Engineering
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