Electron Emission Characteristic from Pb(Zr,Ti)O3 Thin Plate by Infrared Light Irradiation
スポンサーリンク
概要
- 論文の詳細を見る
A new electron-emission-type infrared light sensor, which uses the principle of electron emission from a Pb(Zr,Ti)O3 (PZT) thin plate, has been proposed. However, the electron supply route to the emission plane is not yet well understood. As pulsed infrared light was irradiated onto the sensor, the emission current increased rapidly and decreased slowly. The emission current peak value did not change during the continuous detection operation. When the infrared light is shielded, electron emission stops, the temperature of the PZT thin plate returns to the initial state, and an electric field appears due to spontaneous polarization. It is assumed that electrons are supplied through the PZT thin plate from the back-surface electrode to the emission plane via this electric field. In the pulsed infrared light irradiation experiment, we could recognize that the emission current peak value does not depend on the light shielding time. An electron supply model from the back-surface electrode through the PZT thin plate during a detection operation is proposed. In a quasi steady or thermal equilibrium state, the electron supply to the emission plane of the PZT thin plate is sufficient for a detection operation under ordinary irradiation conditions. Therefore, the proposed sensor is viable for use as an infrared sensor or imager under ordinary infrared light irradiation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
-
Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
-
Takao Hidekuni
Department of Electric and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
-
Takamuro Daisuke
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Japan
-
Sawada Kazuaki
Department of Electric and Electronic Engineering, Toyohashi University of Technology
-
Takao Hidekuni
Department of Electric and Electronic Engineering, Toyohashi University of Technology
関連論文
- Low-Noise Fully Differential Amplifiers Using JFET-CMOS Integration Technology for Smart Sensors
- Neo-Transmitter Using Pulse Width Modulation (PWM) Method for Wireless Smart Sensors
- Traumatic mesenteric bleeding managed solely with transcatheter embolization
- Field Electron Emission from Silicon Nanoprotrusions : Surfaces, Interfaces, and Films
- Improvement of Metal-Oxide Semiconductor Interface Characteristics in Complementary Metal-Oxide Semiconductor on Si(111) by Combination of Fluorine Implantation and Long-Time Hydrogen Annealing
- Fabrication of JFET device on Si (111) for sensor interface array circuit
- Signal Conditioning CMOS Circuits Integrated on Si (111) for Image-Recording Sensor of Neural Activity
- Development of Radio Frequency Transmitters Including On-chip Antenna for Intelligent Human Sensing Systems
- Prognostic Factors and Proliferative Activities in Breast Cancer. A Comparative Study between Recurrent and Non-Recurrent Cases of Human Breast Carcinomas
- Excess Noise Characteristics of Hydrogenated Amorphous Silicon p-i-n Photodiode Films
- Excess Noise Characteristics of a-Si:H p-i-n Photodiode Films
- Excess Noise Characteristics of Hydrogenated Amorphous Silicon Avalanche Photodiode Films Using Functionally Graded Structure
- Excess Noise Characteristics of a-Si:H Avalanche Photodiode Films Using Functionally Graded Structure
- Highly sensitive quantification of vancomycin in plasma samples using liquid chromatography-tandem mass spectrometry and oral bioavailability in rats
- Realization of n-type and p-type Si-Microprobe Array Using In-Situ Doping with Selective Vapor-Liquid-Solid (VLS) Growth Method
- Highly Syn π-Facial Preference in the Diels - Alder Reactions of 1,2,3,4,5-Pentamethylcyclopentadienes Having Carboxy, Ethoxycarbonyl, and Cyano Substituents at 5-Positions
- Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's
- Evaluation of Diabetic Nephropathy by Doppler Color Flow Imaging
- A Fused pH and Fluorescence Sensor Using the Same Sensing Area
- Compact Electrochemical System Using On-Chip Sensor Electrodes and Integrated Devices
- Charge Accumulation Type Hydrogen Ion Image Sensor with High pH Resolution
- Properties and Mechanism of Si Selective Epitaxial Growth on Al_2O_3 using Electrom Beam Irradiation
- Double SOI Structures and Device Applications with Heteroepitaxial Al_2O_3 and Si
- Multichannel 5 × 5-Site 3-Dimensional Si Microprobe Electrode Array for Neural Activity Recording System
- Effects of the π and π^* Orbitals of the 5-Unsaturated Substituents on the π-Facial Selectivities in the Diels-Alder Reactions of Cyclopentadienes
- Epitaxial Si on Al_2O_3 Films Grown with O_2 Gas by the Ultrahigh-Vacuum Chemical Vapor Deposition Method
- The Effect of Oxidation Source Gas on Epitaxial Al_2O_3 Films on Si
- Epitaxial Si on Al_2O_3 Films Grown with O_2 Gas by UHV-CVD Method
- Novel Pressure Sensors Using Epitaxially Stacked Si/Al_2O_3/Si Structures for High-Precision Thickness Control of Silicon Diaphragms
- Reductive Degradation of a[2Fe-2S] Cluster of Chlorella Ferredoxin Studied by Circular Dichroism Spectroscopy
- Formation of Very Thin Epitaxial Al_2O_3 Pre-layer with Very Smooth Surface on Si (111) Using a Protective Oxide Layer
- Formation of Very Thin Epitaxial Al_2O_3 Pre-Layer with Very Smooth Surface on Si(111) Using Protective Oxide Layer
- Fabrication of the Si/Al_2O_3/SiO_2/Si Structure Using O_2 Annealed Al_2O_3/Si Structure
- Fabrication of the Si/Al_2O_3/SiO_2/Si Structure by Using the O_2 Annealed Al_2O_3/Si Structure
- Real-Time Two-Dimensional Imaging of Potassium Ion Distribution Using an Ion Semiconductor Sensor with Charged Coupled Device Technology
- Fabrication and Electrical Characterization of Ultrathin Crystalline Al_2O_3 Gate Dielectric Films on Si(100) and Si(111) by Molecular Beam Epitaxy : Electrical Properties of Condensed Matter
- Fabrication of Resonance Tunnel Diode by γ-Al_2O_3/Si Multiple Heterostructures
- Three Dimensional Polysilicon Type Accelerometer Using Poly-Si/SiOX_n/Si/SiOX_n/Si Structure
- Effect of Oxygen Radicals for Epitaxial Growth of Al_2O_3 on Si
- On the genus field of an algebraic number field of odd prime degree
- Study of a Wireless Multimodal Sensing System Integrated with an Electrical Conductivity Sensor and a Temperature Sensor for the Health Control of Cows
- Development of Surface Morphology of Epitaxial Al_2O_3 on Silicon by Controlling Reaction between Oxygen and Silicon Surface
- Difference of Si Selective Growth on Al_2O_3 and SiO_2 Substrates by Electron Beam Irradiation Method
- Fabrication of Si/Al2O3/Si Silicon on Insulator Structures Grown by Ultrahigh-Vacuum CVD Method
- Preparation of PLZT Thin Films by RF Sputtering
- Back-Irradiation Type Photo-Detector Arrays Using Field Emitter Deviece(Recent Progress in Photon Detection Technology)
- Fabrication of Thermoelectric Sensor Using Silicon-on-Insulator Structure
- Miniaturization of Electrical Conductivity Sensors for a Multimodal Smart Microchip
- A Wide Dynamic Range Photogate-Type Active Pixel Sensor Using a Self-Regulation Principle
- Smart Microfluidic Electrochemical DNA Sensors with Signal Processing Circuits
- Characteristics of Highly Sensitive pH Sensors with Charge Accumulation Operation
- Realization of In Situ Doped n-Type and p-Type Si-Microprobe Array by Selective Vapor-Liquid-Solid (VLS) Growth Method
- Rickets in Infancy and Childhood
- Evaluation of Electrodeposited Gold Nanostructures for Applications in QCM Sensing
- Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
- Fabrication of Crystalline HfO2 High-$\kappa$ Dielectric Films Deposited on Crystalline $\gamma$-Al2O3 Films
- Label-Free Acetylcholine Image Sensor Based on Charge Transfer Technology for Biological Phenomenon Tracking
- Intelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor
- Multichannel $5 \times 5$-Site 3-Dimensional Si Microprobe Electrode Array for Neural Activity Recording System
- Effect of Annealing on Physical and Electrical Properties of Ultrathin Crystalline $\gamma$-Al2O3 High-$k$ Dielectric Deposited on Si Substrates
- Progressive-Type Fused pH and Optical Image Sensor
- Development of Cavity Structure for Field Emission on Si Substrate
- Multiplication Characteristics of a-Si:H p-i-n Photodiode Film in High Electric Field
- Current–Voltage Characteristics of $\gamma$-Al2O3/epi-Si Resonant Tunneling Diodes with Different Quantum Well Thicknesses
- The Characteristic Improvement of Si (111) Metal–Oxide–Semiconductor Field-Effect Transistor by Long-Time Hydrogen Annealing
- Multiwavelength Photosensor for On-Chip Real-Time Monitoring of Fluorescence and Turbidity
- A Post-Complementary Metal Oxide Semiconductor Formation Process of High-Adhesiveness SU-8 Structures for Reliable Fabrication of Integrated Microelectromechanical System Sensors
- Electrical Characteristics of Epitaxial $\gamma$-Al2O3/Si for Quantum Tunneling Device
- Integrated Square Wave Voltammetry Redox Sensor System for Electrochemical Analysis
- Electron Emission Characteristic from Pb(Zr,Ti)O3 Thin Plate by Infrared Light Irradiation
- A Post-Complementary Metal Oxide Semiconductor Formation Process of High-Adhesiveness SU-8 Structures for Reliable Fabrication of Integrated Microelectromechanical System Sensors
- On congruence L-series:Dedicated to Professor Z. Suetuna on his 60th birthday
- On the variety of orbits with respect to an algebraic group of birational transformations