Intelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor
スポンサーリンク
概要
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Au/n-GaN Schottky barrier diode combined with Si-charge transfer type signal processor was investigated to realize intelligent UV sensors with low noise and high sensitivity. A 10-nm-thick Au was used for the semitransparent Schottky contact. The dark current--voltage characteristic of the Schottky barrier diode exhibited the ideal factor of 1.28 and barrier height of 1.1 eV. The sensitivity of 26.3 mA/W was obtained at a wavelength of 296 nm for 12 μW/mm2 UV irradiation power. Furthermore, the Au/n-GaN Schottky barrier diode was connected with the Si-charge transfer type signal processor to examine the effectiveness of the combined device for a UV detector. The processor was driven by a programmable function generator. Using the open-circuit voltage V_{\text{oc}} as the input signal, 350 mV output was achieved in a single integration cycle. The signal from the Schottky barrier diode was successfully amplified by accumulation operation of the Si-charge transfer type signal processor.
- 2012-04-25
著者
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Wakahara Akihiro
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Sawada Kazuaki
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Hashimoto Yoshinori
Department Of Applied Science Kochi University
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Okada Hiroshi
Electronics-inspired Interdisciplinary Research Institute Toyohashi Univ. Of Technology
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Matsuno Fumiya
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Hashimoto Yoshinori
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Lee ChangYong
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Sawada Kazuaki
Department of Electric and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Sawada Kazuaki
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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Sawada Kazuaki
Department of Electric and Electronic Engineering, Toyohashi University of Technology
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Okada Hiroshi
Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
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