Study of Electrical Response in Pt/GaN Schottky Barrier Diode to CO Gas for High Temperature Gas Sensor
スポンサーリンク
概要
- 論文の詳細を見る
The response characteristics of a Pt/GaN Schottky barrier diode (SBD) to carbon monoxide (CO) gas have been investigated. The characteristics of a GaN-based SBD with a 30-nm-thick Pt catalyst were measured at 300 °C for various CO gas concentrations. The amplitude of the single exponential response of the current under reverse bias changed reasonably with CO gas concentration. We have proposed a parallel diode model to fit the observed response. Using this model, the absorption/desorption of gas molecules and change of the Schottky barrier height are estimated.
- 2011-01-25
著者
-
Furukawa Yuzo
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
-
Wakahara Akihiro
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
-
Okada Hiroshi
Intelligent Sensing System Research Center Toyohashi University Of Technology
-
Furukawa Yuzo
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
-
Naruse Atsuki
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
関連論文
- Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_N
- Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_N
- Structural Characterization of AlP/GaP Disordered Superlattice by Dynamical Simulation of X-Ray Diffraction
- Operation of Monolithically-Integrated Digital Circuits with Light Emitting Diodes Fabricated in Lattice-Matched Si/III-V-N/Si Heterostructure
- Improvement of the Crystalline Quality of InN Layers Grown on Sapphire (0001) by Surface Nitridation
- Infrared Absorption Spectrum of InNP
- Effect of Indium on Photoluminescence Properties of InGaPN Layers Grown by Solid Source Molecular Beam Epitaxy
- Dislocation-Free In_xGa_P_N_y/GaP_N_z Double-Heterostructure Light Emitting Diode on Si Substrate
- Hardening Effect of GaP_N_x and GaAs_ N_x Alloys by Adding Nitrogen Atoms
- Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate
- Analog Integrated Circuit for Motion Detection with Simple-Shape Recognition Based on Frog Vision System
- Analog Vision Chip for Motion Detection of an Approaching Object against a Moving Background Based on the Insect Visual System
- A Network of Analog Metal Oxide Semiconductor Circuits for Motion Detection with Local Adaptation to a Background Image
- Analog Integrated Circuit for Motion Detection against Moving Background Based on the Insect Visual System
- Fabrication and Characterization of Eosin-Y-Sensitized ZnO Solar Cell
- Integration of Micro-Light-Emitting-Diode Arrays and Silicon Driver for Heterogeneous Optoelectronic Integrated Circuit Device
- Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy
- Analog Metal-Oxide-Semiconductor Integrated Circuit Implementation of Approach Detection with Simple-Shape Recognition Based on Visual Systems of Lower Animals
- Study of Electrical Response in Pt/GaN Schottky Barrier Diode to CO Gas for High Temperature Gas Sensor
- An X-Ray Diffraction Method for Characterization of Several Lattice-Matched Heteroepitaxial Films
- Analog Integrated Circuit for Motion Detection of Approaching Object Based on the Insect Visual System
- Analog LSI Implementation of Biological Direction-Selective Neurons
- An Integrated Circuit for Two-Dimensional Edge-Detection with Local Adaptation Based on Retinal Networks
- Signal Formation of Image-Edge Motion Based on Biological Retinal Networks and Implementation into an Analog Metal-Oxide-Silicon Circuit
- Study of Ion-Beam-Induced Damage and Luminescence Properties in Terbium-Implanted AlGaN
- Plasma-Induced Damage and Recovery on Au/n-GaN Schottky Diode in Different Processes
- Intelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor
- Fabrication and Characterization of Eosin-Y-Sensitized ZnO Solar Cell
- Effect of Indium on Photoluminescence Properties of InGaPN Layers Grown by Solid Source Molecular Beam Epitaxy
- Complementary Metal Oxide Semiconductor-Compatible Back-Side-Illuminated Photodiode for Optoelectronic Integrated Circuit Devices
- Dislocation-Free InxGa1-xP1-yNy/GaP1-zNz Double-Heterostructure Light Emitting Diode on Si Substrate
- Growth of Low-Dislocation-Density AlN under Ga Irradiation
- High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy
- Monolithic Implementation of Elemental Devices for Optoelectronic Integrated Circuit in Lattice-Matched Si/III–V–N Alloy Layers
- Red-Light-Emitting Diodes with Site-Selective Eu-Doped GaN Active Layer