Growth of Low-Dislocation-Density AlN under Ga Irradiation
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概要
- 論文の詳細を見る
A simple growth technique for the reduction of threading dislocation density of AlN under Ga irradiation during initial growth stage is proposed. In X-ray rocking curve measurements, linewidth of (0002) and $(1\bar{1}02)$ diffraction for 500-nm-thick AlN were 100 and 260 arcsec, respectively. The threading-dislocation density of the AlN was estimated to be ${\sim}8\times 10^{8}$ cm-2 from the symmetric and asymmetric diffractions. The AlGaN/AlN multi-quantum well structure was grown on the high-quality AlN layer. By cathodoluminescence mapping measurements, intense deep-UV emission at 246 nm was observed from the area of more than 90%. The low dislocation density AlN is an ideal template for deep-UV optical devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-15
著者
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Furukawa Yuzo
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Yonezu Hiroo
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Nakajima Akira
Department Of Applied Electronics Tokyo Institute Of Technology
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Yonezu Hiroo
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Yamaguchi Sayuri
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Yokoya Hironobu
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Furukawa Yuzo
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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