High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN Heterointerface
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概要
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High density two dimensional hole gas (2DHG) with a charge density of $1.1\times 10^{13}$ cm-2 has been demonstrated for the first time in GaN/AlGaN heterostructures. The 2DHG is induced by negative polarization charges at the GaN/AlGaN interface. The layer structures have been designed based on theoretical simulation results to maximize the 2DHG charge density. The heterostructures have been grown on sapphire substrate by metal organic chemical vapor deposition. Hall mobility of the 2DHG of 16 cm2 V-1 s-1 has been measured at room temperature with sheet resistance of 35 k$\Omega$/sq.
- 2010-12-25
著者
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KAWAI Hiroji
Powdec K.K
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Nakajima Akira
Department Of Applied Electronics Tokyo Institute Of Technology
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Sumida Yasunobu
POWDEC K.K., 1-23-15 Wakagi-cho, Oyama, Tochigi 323-0028, Japan
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Narayanan E.
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, U.K.
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Dhyani Mahesh
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, U.K.
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Nakajima Akira
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, U.K.
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