KAWAI Hiroji | Powdec K.K
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概要
関連著者
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KAWAI Hiroji
Powdec K.K
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AO Jin-Ping
Institute of Technology and Science, The University of Tokushima
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HU Cheng-Yu
Institute of Technology and Science, The University of Tokushima
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OHNO Yasuo
Institute of Technology and Science, The University of Tokushima
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NAKATANI Katsutoshi
Institute of Technology and Science, the University of Tokushima
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Ohno Yasuo
Institute Of Technology And Science The University Of Tokushima
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Hu Cheng-yu
Institute Of Technology And Science The University Of Tokushima
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Sumida Yasunobu
POWDEC K.K., 1-23-15 Wakagi-cho, Oyama, Tochigi 323-0028, Japan
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Ohno Yasuo
Univ. Tokushima Tokushima‐shi Jpn
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Ao Jin‐ping
Univ. Tokushima Tokushima‐shi Jpn
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Ao Jin-ping
Satellite Venture Business Laboratory The University Of Tokushima
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Ao J‐p
Univ. Tokushima Tokushima‐shi Jpn
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Suzuki Toshi-kazu
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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Shinohara Naoki
Research Institute For Sustainable Humanosphere Kyoto University
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Hu Cheng‐yu
Univ. Tokushima Tokushima Jpn
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Nakajima Akira
Department Of Applied Electronics Tokyo Institute Of Technology
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Nakatani Katsutoshi
Institute Of Technology And Science The University Of Tokushima
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Ikawa Yusuke
Institute Of Technology And Science The University Of Tokushima
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Ohno Yasuo
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Takahashi Kensuke
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Niwa Naoki
Kajima Technical Research Institute, Tokyo 182-0036, Japan
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Narayanan E.
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, U.K.
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Dhyani Mahesh
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, U.K.
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Shinohara Naoki
Research Institute for Sustainable Humanosphere (RISH), Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
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Ikawa Yusuke
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Tanaka Nariaki
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Nakajima Akira
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, U.K.
著作論文
- Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
- Buffer Layer Doping Concentration Measurement Using V_T-V_ Characteristics of GaN HEMT with p-GaN Substrate Layer
- High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN Heterointerface
- GaN Schottky Diodes for Microwave Power Rectification
- Delay Time Analysis of AlGaN/GaN Heterojunction Field-Effect Transistors with AlN or SiN Surface Passivation