GaN Schottky Diodes for Microwave Power Rectification

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概要

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• A GaN Schottky diode with a lateral structure for microwave power rectification was developed on a semi-insulating silicon carbide substrate. Device evaluation showed that the turn-on voltage was around 0.8 V. The on-resistance of the diode with one finger was 25.6 $\Omega$, the breakdown voltages for those with the field plate reached 93 V, for the wafer with a doping level of $4.0 \times 10^{16}$ cm-3. The forward and reverse characteristics became stabilized after surface etching. RF measurement at 2.45 GHz showed that the capacitance of the diode was about 0.29 pF at a bias of 0 V. The value is satisfactorily small for microwave rectification. If the superior material characteristics of GaN are fully utilized, GaN Schottky diodes will play key roles in microwave power transmission applications.

• 2009-04-25

著者

• AO Jin-Ping

  Institute of Technology and Science, The University of Tokushima

• KAWAI Hiroji

  Powdec K.K

• Shinohara Naoki

  Research Institute For Sustainable Humanosphere Kyoto University

• Ohno Yasuo

  Institute Of Technology And Science The University Of Tokushima

• Hu Cheng-yu

  Institute Of Technology And Science The University Of Tokushima

• Ikawa Yusuke

  Institute Of Technology And Science The University Of Tokushima

• Ohno Yasuo

  Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan

• Takahashi Kensuke

  Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan

• Niwa Naoki

  Kajima Technical Research Institute, Tokyo 182-0036, Japan

• Shinohara Naoki

  Research Institute for Sustainable Humanosphere (RISH), Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan

• Ikawa Yusuke

  Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan

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