GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO2 Gate Insulator on AlGaN/GaN Heterostructure
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概要
- 論文の詳細を見る
GaN metal–oxide–semiconductor field-effect transistors (MOSFETs) with a tetraethylorthosilicate (TEOS) SiO2 insulator were developed and evaluated using an AlGaN/GaN HFET structure as the source and drain regions. Operation up to a gate voltage of 10 V was realized at a low gate leakage current. A new method of measuring the mobility of a MOSFET was developed to prevent the effect of hysteresis, in which a relay was used to switch between current measurement and capacitance measurement at the same gate voltage. The maximum field-effect mobility is approximately 45 cm2 V-1 s-1 at an interface state density of $1.02 \times 10^{13}$ cm-2 eV-1.
- 2010-04-25
著者
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AO Jin-Ping
Institute of Technology and Science, The University of Tokushima
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Ohno Yasuo
Institute Of Technology And Science The University Of Tokushima
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Hu Cheng-yu
Institute Of Technology And Science The University Of Tokushima
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SUGIMOTO Masahiro
Toyota Motor Corp.
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Nakatani Katsutoshi
Institute Of Technology And Science The University Of Tokushima
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Jin-Ping Ao
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Ohmuro Keisuke
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Sogawa Yuji
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Katsutoshi Nakatani
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Yuji Sogawa
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Keisuke Ohmuro
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Masahiro Sugimoto
Toyota Motor Corp., 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309, Japan
関連論文
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- Buffer Layer Doping Concentration Measurement Using V_T-V_ Characteristics of GaN HEMT with p-GaN Substrate Layer
- GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO2 Gate Insulator on AlGaN/GaN Heterostructure
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