A Study on Ohmic Contact to Dry-Etched p-GaN
スポンサーリンク
概要
- 論文の詳細を見る
- 2008-07-01
著者
-
Ohno Yasuo
Univ. Tokushima Tokushima‐shi Jpn
-
AO Jin-Ping
Institute of Technology and Science, The University of Tokushima
-
OKADA Masaya
Institute of Technology and Science, The University of Tokushima
-
HU Cheng-Yu
Institute of Technology and Science, The University of Tokushima
-
OHNO Yasuo
Institute of Technology and Science, The University of Tokushima
-
Ao Jin‐ping
Univ. Tokushima Tokushima‐shi Jpn
-
Ao Jin-ping
Satellite Venture Business Laboratory The University Of Tokushima
-
Ao J‐p
Univ. Tokushima Tokushima‐shi Jpn
-
岡田 政也
徳島大学ソシオテクサイエンス研究部
-
Okada Masaya
Univ. Tokushima Tokushima‐shi Jpn
-
Okada Masaya
Institute Of Technology And Science The University Of Tokushima
-
Hu Cheng‐yu
Univ. Tokushima Tokushima Jpn
-
Ohno Yasuo
Institute Of Technology And Science The University Of Tokushima
-
Hu Cheng-yu
Institute Of Technology And Science The University Of Tokushima
-
Okada Masaya
Dept. of Electrical and Electronic Eng., The University of Tokushima, Tokushima 770-8506, Japan
関連論文
- Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
- Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
- Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Gamma Radiation Effects on the Ohmic Contact of AlGaN/GaN HEMTs
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure(Compound Semiconductor Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Schottky Barrier Height Determination by Capacitance-Voltage Measurement on n-GaN with Exponential Doping Profile
- High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors(Heterostructure Microelectronics with TWHM2003)
- C-10-13 マイクロ波整流用GaNショットキーダイオードの特性評価(C-10. 電子デバイス,一般セッション)
- C-10-10 GaN/AlGaN/GaNフォトトランジスタを用いたUVセンサ回路(C-10.電子デバイス,一般講演)
- C-10-19 AlGaN/GaN HFETパルスI-V特性シミュレーション(C-10.電子デバイス)
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
- Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
- A 1.3V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10Gbps (Special Issue on Ultra-High-Speed LSIs)
- A Study on Ohmic Contact to Dry-Etched p-GaN
- Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
- AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers
- Effect of Moisture on Impact Toughness of Sugar-Coated Tablets Manufactured by the Dusting Method
- Improvement of Impact Toughness of Sugar-Coated Tablets Manufactured by the Dusting Method
- Buffer Layer Doping Concentration Measurement Using V_T-V_ Characteristics of GaN HEMT with p-GaN Substrate Layer
- GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO2 Gate Insulator on AlGaN/GaN Heterostructure
- 2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection
- GaN Schottky Diodes for Microwave Power Rectification
- Metal–Insulator–Semiconductor Diode Characterization on n-GaN by Capacitance–Voltage Measurement at 150 °C
- Influence of Dry Recess Process on Enhancement-Mode GaN Metal--Oxide--Semiconductor Field-Effect Transistors
- Wireless Inter-Chip Signal Transmission by Electromagnetic Coupling of Open-Ring Resonators
- Gate leakage reduction mechanism of AlGaN/GaN MIS-HFETs
- Inductively coupled plasma reactive ion etching with SiCl4 gas for recessed gate AlGaN/GaN heterostructure field effect transistor
- Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors
- Mechanism of AlGaN/GaN heterostructure field-effect transistor threshold voltage shift by illumination