AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers

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概要

• 論文の詳細を見る
• 2003-04-15

著者

• AO Jin-Ping

  Satellite Venture Business Laboratory, The University of Tokushima

• Ao Jin-ping

  Satellite Venture Business Laboratory The University Of Tokushima

• Kikuta Daigo

  Nitride Semiconductor Co. Ltd.

• LIU Yu-Huai

  Satellite Venture Business Laboratory, The University of Tokushima

• Sakai Shiro

  Nitride Semiconductor Co. Ltd.

• Wang Tao

  Department Of Chemistry University Of Science And Technology Of China

• OHNO Yasuo

  Nitride Semiconductor Co., Ltd.

• Wang T

  Department Of Electrical And Electronic Engineering The University Of Tokushima

関連論文

• Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Gamma Radiation Effects on the Ohmic Contact of AlGaN/GaN HEMTs
• Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure(Compound Semiconductor Devices, Fundamental and Application of Advanced Semiconductor Devices)
• High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors(Heterostructure Microelectronics with TWHM2003)
• Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
• High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
• Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
• Two-Dimensional Device Simulation of 0.05 μm-Gate AlGaN/GaN HEMT(Heterostructure Microelectronics with TWHM2003)
• A Study on Ohmic Contact to Dry-Etched p-GaN
• Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
• Study of Transition Probability of Low States of Alkali Metal Atoms with WBEPM Theory
• AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers
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• Buffer Layer Doping Concentration Measurement Using V_T-V_ Characteristics of GaN HEMT with p-GaN Substrate Layer
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• 2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection
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