Two-Dimensional Device Simulation of 0.05 μm-Gate AlGaN/GaN HEMT(<Special Issue>Heterostructure Microelectronics with TWHM2003)
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概要
- 論文の詳細を見る
DC and RE performances of AlGaN/GaN HEMTs are simulated using a two-dimensional device simulator with the material parameters of GaN and AlGaN. The cut-off frequency is estimated as 205 GHz at the gate length of 0.05μm and the drain breakdown voltage at this gate length is over 10 V. The values are satisfactory for millimeter wavelength power applications. The use of thin AlGaN layers has key importance to alleviate gate parasitic capacitance effects at this gate length.
- 社団法人電子情報通信学会の論文
- 2003-10-01
著者
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OHNO Yasuo
Department of Electrical and Electronic Engineering, The University of Tokushima
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AO Jin-Ping
Satellite Venture Business Laboratory, The University of Tokushima
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Ao Jin-ping
Satellite Venture Business Lab. The University Of Tokushima
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KAWAKAMI Yoshifumi
Asahi KASEI Corp.
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KUZE Naohiro
Asahi KASEI Corp.
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Ohno Yasuo
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Ohno Yasuo
Department Of Electric And Electronic Engineering The University Of Tokushima
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