High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors(<Special Issue>Heterostructure Microelectronics with TWHM2003)

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概要

• 論文の詳細を見る

• High-temperature stability of copper (Cu) gate AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. Samples were annealed at various temperatures to monitor the changes on device performances. Current-voltage performance such as drain-source current, transconductance, threshold voltage and gate leakage current has no obvious degradation up to annealing temperature of 500℃ and time of 5 minutes. Also up to this temperature, no copper diffusion was found at the Cu and AlGaN interface by secondary ion mass spectrometry determination. At annealing temperature of 700℃ and time of 5 minutes, device performance was found to have degraded. Gate voltage swing increased and threshold voltage shifted due to Cu diffusion into AlGaN. These results indicate that the Schottky contact and device performance of Cu-gate AlGaN/GaN HEMT is stable up to annealing temperature of 500℃. Cu is a promising candidate as gate metallization for high-performance power AlGaN/GaN HEMTs.

• 社団法人電子情報通信学会の論文
• 2003-10-01

著者

• Ohno Yasuo

  Univ. Tokushima Tokushima‐shi Jpn

• KIKUTA Daigo

  Department of Electrical and Electronic Engineering, The University of Tokushima

• OHNO Yasuo

  Department of Electrical and Electronic Engineering, The University of Tokushima

• KUBOTA Naotaka

  Department of Electrical and Electronic Engineering, The University of Tokushima

• AO Jin-Ping

  Satellite Venture Business Laboratory, The University of Tokushima

• NAOI Yoshiki

  Department of Electrical and Electronic Engineering, The University of Tokushima,

• Ao Jin‐ping

  Univ. Tokushima Tokushima‐shi Jpn

• Ao Jin-ping

  Satellite Venture Business Laboratory The University Of Tokushima

• Ao J‐p

  Univ. Tokushima Tokushima‐shi Jpn

• Kikuta Daigo

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Ao Jin-ping

  Satellite Venture Business Lab. The University Of Tokushima

• Naoi Yoshiki

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Naoi Y

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Kubota Naotaka

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Kubota N

  Department Of Applied Chemistry Faculty Of Engineering Oita University

• Ohno Y

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Utsunomiya University

• Ohno Yasuo

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Ohno Yasuo

  Department Of Electric And Electronic Engineering The University Of Tokushima

• Ao JP

  Satellite Venture Business Laboratory, The University of Tokushima

• Kikuta D

  Department of Electrical and Electronic Engineering, The University of Tokushima,

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