Growth of AlN and GaN by metalorganic chemical vapor deposition on BP synthesized by flux method
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概要
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BP with the size of 50 μm to 3 mm was synthesized by the Cu flux method. The BP crystals have a zincblend structure, and the lattice constant and the cathodoluminescence peak wavelength were 4.557 Å and 370 nm, respectively. GaN and AlN were grown by metalorganic chemical vapor deposition on BP. It was found that AlN grown at 1150 °C on (100)BP was grown smoothly but that grown on (111)BP had a rough surface. GaN, however, was irregularly grown on both (100) and (111)BP. It was demonstrated that AlN on (100)BP is another candidate as a substrate for a UV-light-emitting diode.
- Japan Society of Applied Physicsの論文
- 2007-04-25
著者
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Nishino Katsushi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Naoi Yoshiki
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Tsukihara Masashi
Venture Business Laboratory Of Intellectual Property Office The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Yamamoto Mamiko
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Hamazaki Yuta
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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