Selective Lateral Growth Mechanism of GaAs by Liquid-Phase Electroepitaxy
スポンサーリンク
概要
- 論文の詳細を見る
Selective lateral growth of GaAs over SiO_2-covered GaAs substrate by liquid-phase electroepitaxy (LPEE) is analyzed using a simplified model, and the analysis is compared with the experiment. The aspect ratio defined as the ratio of lateral to vertical growth rate is shown to be greatly enhanced by flowing current during LPE growth, and an aspect ratio of more than 10 is experimentally obtained. The enhanced lateral growth is caused by the increased transport of the growing species by the electric field. The simplified growth model discussed in this paper agrees with the experimental results reasonably well and expresses most of the important features of the LPEE.
- 社団法人応用物理学会の論文
- 1994-01-15
著者
-
Sakai Shiro
Department Of Electrical And Electronic Engineering Tokushima University
-
Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
-
OHASHI Yasuno
Department of Electrical and Electronic Engineering, Tokushima University
-
Ohashi Yasuno
Department Of Electrical And Electronic Engineering Tokushima University
関連論文
- Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
- High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
- V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
- Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
- GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
- Thermal Stress and Dislocation Density in Undercut GaAs on Si
- Photoluminescence Dark Spot Dynamics in GaAs Grown on Si
- Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate
- Zinc Diffusion in Al_Ga_As Grown on Si Substrate
- A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector
- Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
- Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes
- Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
- Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
- Ohmic Contact to P-Type GaN
- Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate
- Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si Substrates
- Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
- Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
- Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
- Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
- Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
- Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
- Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
- LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
- Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
- Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
- New Wavelength-Demultiplexing InGaAsP/InP Photodiodes : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP
- InGaAsP/InP Native Oxide Stripe Lasers
- InGaAsP/InP Double-Heterostructure Photodiodes
- Role of Dislocation in InGaN Phase Separation
- Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
- Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
- Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
- Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
- Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
- Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vpor Deposition
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
- MOCVD Growth of GaAs_P_ on Si Substrate
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Ellipsometric Studies on Sputter-Damaged Layer in n-InP
- A Novel Method of Bulding a Compositional Non-Uniformity in an InGaN Layer Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganie Chemical Vapor Deposition
- X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
- Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
- High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
- Photoluminescence Study on InGaN/GaN Quantum Well Structure Grown on (112^^-0) Sapphire Substrate
- Growth of InAsP on InP by Liquid Phase Electroepitaxy
- Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
- Simplified Dual Channel Optical Trarnsmission Using Integrated Light Emitters and Photodetectors
- Nucleation Control in the Growth of Bulk GaN by Sublimation Method
- Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film
- Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
- Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
- MOCVD Growth of InP Using Plasma Pre-Cracking
- Very Low Dark Current P-p-P Base InGaAsP/InP Phototransistors
- Theoretical Analysis of Simplified Four Wavelength Division Solar Cell System
- Wavelength Division GaAlAs/GaAs Solar Cells Grown by MOCVD : II-1: COMPOUND SOLAR CELLS
- Wavelength Demultiplexing Photodiode with Very High Isolation Ratio
- AlGaAs/GaAs Wavelength-Dividing Photodiode with Multi-Layer Filters Grown by MOCVD
- Schottky Barrier Height of Au/p-In_Ga_xAs_yP_ with Native Oxide
- Development of Mott Diode for FIR Detection
- Selective Lateral Growth Mechanism of GaAs by Liquid-Phase Electroepitaxy
- Green Light Emission From GaInNAs/GaN Multiple Quantum Well
- Al0.17Ga0.83N film using middle-temperature intermediate layer grown on (0001) sapphire substrate by metal-organic chemical vapor deposition
- A novel method of building a compositional non-uniformity in an InGaN layer grown on sapphire substrate by metalorganic chemical vapor deposition
- Growth of AlN and GaN by metalorganic chemical vapor deposition on BP synthesized by flux method
- Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition