Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vpor Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-08-15

著者

• SAKAI Shiro

  Department of Electrical and Electronic Engineering, University of Tokushima

• WANG Tao

  Satellite Venture Business Laboratory, The University of Tokushima

• LACROIX Yves

  Satellite Venture Business Laboratory, The University of Tokushima

• Sakai S

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Lacroix Y

  Univ. Tokushima Tokushima Jpn

• Lacroix Yves

  Satellite Venture Business Laboratory The University Of Tokushima

• Lee Young-bae

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Wang T

  Department Of Chemistry University Of Science And Technology Of China

• LACHAB Mohamed

  Satellite Venture Business Laboratory, Nitride Photonic Semiconductors Laboratory, The University of

• NISHINO Katsushi

  Department of Electrical and Electronic Engineering, University of Tokushima

• Liu Yuhuai

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Sakai Shiro

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Nishino K

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Nishino K

  Department Of Electronic Science And Engineering Kyoto University

• Nishino Katsushi

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Lachab Mohamed

  Sateliite Venture Business Laboratory Tokushima University

• CHUNG Sung

  Satellite Venture Business Laboratory, Tokushima University

• BASAK Durga

  Satelite Venture Buisiness Laboratory, Tokushima University

• FAREED Qhalid

  Satellite Venture Business Laboratory, Tokushima University

• KAWAKAMI Yoshihisa

  Department of Electrical and Electronic Engineering, Tokushima University

• Wang Tao

  Satellite Venture Business Laboratory The University Of Tokushima

• Basak Durga

  Satelite Venture Buisiness Laboratory Tokushima University

• Fareed Qhalid

  Satellite Venture Business Laboratory Tokushima University

• Sakai Shiro

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Kawakami Yoshihisa

  Department Of Electrical And Electronic Engineering Tokushima University

• Chung Sung

  Satellite Venture Business Laboratory Tokushima University

• Sakai Shiro

  Department of Electrical and Electronic Engineering, The University of Tokushima

関連論文

• Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
• High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
• V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
• Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
• Mid-Infrared Photoluminescence from Liquid Phase Epitaxial InAs_Sb_y/InAs Multilayers
• GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
• Thermal Stress and Dislocation Density in Undercut GaAs on Si
• Photoluminescence Dark Spot Dynamics in GaAs Grown on Si
• Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate
• Zinc Diffusion in Al_Ga_As Grown on Si Substrate
• A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector
• Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
• Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes
• Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
• Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
• Ohmic Contact to P-Type GaN
• Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate
• Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si Substrates
• Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
• Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
• Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
• Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
• Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
• Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
• Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
• LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
• Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
• Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
• New Wavelength-Demultiplexing InGaAsP/InP Photodiodes : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
• Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP
• InGaAsP/InP Native Oxide Stripe Lasers
• InGaAsP/InP Double-Heterostructure Photodiodes
• Magnetoresistance of Annealed CoNb/Cu Multilayers with Amorphous CoNb Magnetic Layers
• Photoluminescence Properties of Sodium Incorporated in CuInSe_2 Thin Films
• Role of Dislocation in InGaN Phase Separation
• Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique
• Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
• Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
• Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
• Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
• Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
• GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
• Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vpor Deposition
• Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
• Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates
• Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
• Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
• Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
• Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
• MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
• MOCVD Growth of GaAs_P_ on Si Substrate
• AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
• Mechnism of MOCVD Growth for GaAs and AlAs
• Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
• Ellipsometric Studies on Sputter-Damaged Layer in n-InP
• A Novel Method of Bulding a Compositional Non-Uniformity in an InGaN Layer Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
• Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganie Chemical Vapor Deposition
• X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
• Annealing of GaN-InGaN Multi Quantum Wells : Correlation between the Bandgap and Yellow Photoluminescence
• Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
• Al_Ga_N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition
• Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Reactive Ion Etching of GaN and Al_xGa_N Using Cl_2/CH_4/Ar Plasma
• Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
• Selective Etching of GaN over Al_xGa_N Using Reactive Ion Plasma of Cl_2/CH_4/Ar Gas Mixture
• High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
• Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
• Photoluminescence Study on InGaN/GaN Quantum Well Structure Grown on (112^^-0) Sapphire Substrate
• Growth of InAsP on InP by Liquid Phase Electroepitaxy
• Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor
• Epitaxial Growth of Bi_4Ti_3O_/CeO_2/Ce_Zr_O_2 and Bi_4Ti_3O_/SrTiO_3/Ce_Zr_O_2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes
• Surface Morphology and Dielectric Properties of Stoichiometric and Off-Stoichiometric SrTiO_3 Thin Films Grown by Molecular Beam Epitaxy
• Dependence of Electrically Induced Strain on Orientation and Composition in Pb(Zr_xTi_)O_3 Films
• Development of a Sessile Drop Method Concerning Czochralski Si Crystal Growth
• Expansion Behavior of Bubbles in Silica Glass Concerning Czochralski (CZ) Si Growth
• Structure and Piezoelectric Properties of 0.9 Pb(Zr,Ti)O_3-0.1 Pb(Mg,Nb)O_3 Films Prepared by Metalorganic Deposition Process
• A Digital Method of Gas Laser Etching for Oxide Superconductors
• Observation of Electrical Write/Erase Operations for a Memory-Type Polyrmer-Dispersed Cholesteric Liquid Crystal
• Characteristics of Right- and Left-Handed Polymer-Dispersed Cholesteric Liquid Crystals
• Reflective Color Display Using Polymer-Dispersed Cholesteric Liquid Crystal
• Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
• Simplified Dual Channel Optical Trarnsmission Using Integrated Light Emitters and Photodetectors
• Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition
• Nucleation Control in the Growth of Bulk GaN by Sublimation Method
• Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film
• Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
• Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
• Theoretical Study of Energy Levels and Transition Probabilities of Singly Ionized Aluminum(Al II)(Atomic and Molecular Physic)
• Theoretical Study of Energy Levels and Transition Probabilities of Singly Ionized Aluminum (Al II)
• Role of Dislocation in InGaN/GaN Quantum Wells Grown on Bulk GaN and Sapphire Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• MOCVD Growth of InP Using Plasma Pre-Cracking
• Very Low Dark Current P-p-P Base InGaAsP/InP Phototransistors
• Theoretical Analysis of Simplified Four Wavelength Division Solar Cell System
• Wavelength Division GaAlAs/GaAs Solar Cells Grown by MOCVD : II-1: COMPOUND SOLAR CELLS
• Wavelength Demultiplexing Photodiode with Very High Isolation Ratio
• Al0.17Ga0.83N film using middle-temperature intermediate layer grown on (0001) sapphire substrate by metal-organic chemical vapor deposition
• AlGaN/GaN high electron mobility transistor with thin buffer layers
• Effect of GaNP buffer layer on AlGaN epilayers deposited on (0001) sapphire substrates by metalorganic chemical vapor deposition
• Growth of AlN and GaN by metalorganic chemical vapor deposition on BP synthesized by flux method
• Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates

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