Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates

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概要

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• Crystal growth of cubic silicon carbide (3C-SiC) on α-SiC (6H- and 15R-SiC) substrates was carried out by chemical vapor deposition. 3C-SiC (111) can be epitaxially grown on 6H- and 15R-SiC (0001) substrates. Due to the peculiar stacking sequence of α-SiC, double positioning boundaries (DPBs) appear in the 3C-SiC (111) layers. The layer on 15R-SiC has far fewer DPBs than that on 6H-SiC. Successive etching of a thick grown layer and successive observation of a growing surface revealed that the DPBs decreased anisotropically as crystal growth proceeded. Facets formed along DPBs were analyzed by atomic force microscopy. The angles between the facets and the grown surface (111) varied with the crystallographic orientation of DPBs. DPBs may decrease due to the lateral growth from the facets. The difference in the velocities of the anisotropic decrease in DPBs was discussed on the basis of the number of dangling bonds on the facets.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-08-15

著者

• Nishino Katsushi

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• Kimoto Tsunenobu

  Department of Electronic Science and Engineering, Kyoto University,

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