Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells

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概要

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• Conductive filaments formed in Pt/NiO/Pt resistive switching (RS) cells were characterized by conductive atomic force microscopy (C-AFM) and cross-sectional transmission electron microscopy (XTEM) after the removal of top electrodes. The area and current of the filaments were directly detected by C-AFM. By examining various RS cells with different cell resistances in the low-resistance state (R_{\text{LRS}}), it has been revealed that the R_{\text{LRS}} variation in the range of 10--220 \Omega is mainly caused by the variations in the area and shape of the filaments. XTEM was carried out on a filament that dominantly determines R_{\text{LRS}}. The area of the filament significantly varied along the thickness direction of a NiO film, which was consistent with the speculation from C-AFM analysis. Furthermore, the filaments observed in this study consist of reduced NiO with an inclusion of platinum, the electrode material, owing to Joule heating by the current during forming.

• 2013-04-25

著者

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Nishi Yusuke

  Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan

• Iwata Tatsuya

  Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

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