Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition
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概要
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Epitaxial growth was performed on 8° off-axis 4H-SiC(0001) by horizontal hot-wall chemical vapor deposition (CVD) in a SiH4-C3H8-H2 system at 1550°C. High growth rates of 10–13 μm/h were attained by growth with a high SiH4 flow rate of 4.0 sccm. A mirror like surface was obtained by employing an optimum C/Si ratio and by an improved process of initial growth. The epilayers grown with an optimum C/Si ratio showed high purity in the low $10^{13}$ cm-3 range (n-type) and low trap concentrations in the low $10^{11}$ cm-3 range. Minority carrier lifetime was investigated by a differential microwave-detected photoconductance decay ($\mu$-PCD) measurement. A long carrier lifetime of approximately 2 μs was obtained for a 50-μm-thick epilayer
- 2004-07-15
著者
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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DANNO Katsunori
Department of Electronic Science and Engineering, Kyoto University
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Saitoh Hiroaki
Department Of Electronic Science And Engineering Kyoto University
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Hashimoto Koichi
Department Of Biotechnology And Life Science Graduate School Of Engineering Tokyo University Of Agri
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Kimoto Tsunenobu
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan
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Saitoh Hiroaki
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan
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