Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory
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概要
- 論文の詳細を見る
Admittance spectroscopy measurement has been performed on NiOx thin films with various oxygen compositions ($x = 1.0{\mbox{--}}1.2$) in order to characterize localized defect levels. The activation energy and concentration of localized defect levels in NiOx films with low oxygen composition ($x\leq 1.07$) are 120--170 meV and lower than $2\times 10^{19}$ cm-3, respectively. The result of current--voltage measurement of Pt/NiOx/Pt structures indicated that samples with high oxygen composition ($x\geq 1.10$) did not show resistance switching operation, whereas samples with low oxygen composition ($x\leq 1.07$) did. The best oxygen composition of NiOx thin films for realizing repeatable and stable resistance switching operation turned out to be 1.07.
- 2011-01-25
著者
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Iwata Tatsuya
Department Of Frontier Materials Nagoya Institute Of Technology
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Kimoto Tsunenobu
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan
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Nishi Yusuke
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan
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Iwata Tatsuya
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan
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Iwata Tatsuya
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Nishi Yusuke
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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