Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and ($11\bar{2}0$) Formed by N2O Oxidation

概要

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4H-SiC(0001), ($000\bar{1}$), and ($11\bar{2}0$) have been directly oxidized by N2O at 1300°C, and metal–oxide–semiconductor (MOS) interfaces have been characterized. The interface state density has been significantly reduced by N2O oxidation on any face, compared to conventional wet O2 oxidation at 1150°C. Planar n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) fabricated on 4H-SiC(0001), ($000\bar{1}$) and ($11\bar{2}0$) faces have shown effective channel mobilities of 26, 43, and 78 cm2/Vs, respectively. Secondary ion mass spectrometry analyses have revealed a clear pileup of nitrogen atoms near the MOS interface. The thickness of the interfacial transition layer can be decreased by N2O oxidation. The crystal face dependence of the interface structure is discussed. A simple consideration of chemistry indicates that NO, generated from the decomposition of N2O, may be a more efficient oxidant of carbon than O2.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-03-15