Kimoto Tsunenobu | Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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概要
関連著者
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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KIMOTO Tsunenobu
Department of Electronic Science and Engineering, Kyoto University
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Matsunami H
Kyoto Univ. Kyoto Jpn
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Kimoto T
Kyoto Univ. Kyoto Jpn
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Okumura Hironori
Department Of Electronic Science And Engineering Kyoto University
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SUDA Jun
Department of Electronic Science and Engineering, Kyoto University
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NAKAMURA Shun-ichi
Department of Biochemistry, Kobe University School of Medicine
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Kimoto Tsunenobu
Department Of Electronic Science And Engineering Kyoto University
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Noborio Masato
Department Of Electronic Science And Engineering Kyoto University
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YANO Hiroshi
Department of Surgery, NTT West Osaka Hospital
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Yano H
Kyoto Univ. Kyoto‐shi Jpn
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Yano Hiroshi
Department Of Surgery Ntt West Osaka Hospital
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Kimoto Tsunenobu
Science And Engineering Kyoto University
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Yano H
Science And Engineering Kyoto University:(present Address) Graduate School Of Materials Science Nara
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Tamura Satoshi
Department Of Pediatrics National Cardiovascular Center
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Yano Hiroshi
Department Of Agricultural Chemistry Tohoku University
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Kaneko Mitsuaki
Department Of Electronic Science And Engineering Kyoto University
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Yamashita Atsushi
Department of Pathology, Faculty of Medicine, University of Miyazaki
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Okada Tatsuya
Department Of Mathematics School Of Medicine Fukushima Medical University
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Nishino Katsushi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Yamashita A
Tokai Univ. Hiratsuka Jpn
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Tamura Satoshi
Department of pediatrics, National cardiovascular center
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FUJIHIRA Keiko
Department of Electronic Science and Engineering, Kyoto University
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Tamura Shin-ichiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Chen Zhi
Department Of Elecronic Science And Engineering Kyoto University
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Fujihira K
Department Of Electronic Science And Engineering Kyoto University
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Yamashita A
Ntt Interdisciplinary Research Laboratories
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Fujihira Keiko
Department Of Electronic Science And Engineering Kyoto University
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Chen Yi
Department Of Chemistry And Biochemistry Graduate School Of Engineering Kyushu University
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Yamashita Atsushi
Department Of Agricultural Chemistry Tottori University
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Horita Masahiro
Department Of Electronic Science And Engineering Kyoto University
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Watanabe Naoki
Department Of Applied Physics Faculty Of Engineering Tohoku University
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HIYOSHI Toru
Department of Electronic Science and Engineering, Kyoto University
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Hirao Takashi
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Itoh Akira
Department Of Cardiology Osaka City General Hospital
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Hirao Takashi
Department Of Electrical Engineering Osaka University
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OKADA Tatsuya
Department of Mechanical Engineering, Faculty of Engineering, The University of Tokushima
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Kikuchi Ryosuke
Department Of Cardiology Nagoya University Graduate School Of Medicine
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Hiramatsu Takahiro
Res. Inst. For Nanodevices Kochi Univ. Of Technol. 185 Miyanokuchi Tosayamada-cho Kami Kochi 782-850
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Hirao T
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Hirao T
Research Institute For Nano-devices Kochi University Of Technology
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HIRAO Taichi
Department of Electronic Science and Engineering, Kyoto University
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Suto Hirofumi
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Okada T
Department Of Mechanical Engineering Faculty Of Engineering The University Of Tokushima
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Fujii Shunjiro
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Yoo W
Wafermasters Inc. Ca Usa
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Hiyoshi Toru
Department Of Agricultural Chemistry School Of Agriculture Nagoya University
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NISHINO Katsushi
Department of Electrical and Electronic Engineering, University of Tokushima
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Nishino K
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Nishino K
Department Of Electronic Science And Engineering Kyoto University
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Okada Tatsuya
Department Of Mechanical Engineering Tokushima University
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YOO Woo
Department of Electrical Engineering, Kyoto University
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CHEN Zhi
Department of Elecronic Science and Engineering, Kyoto University
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HORITA Masahiro
Department of Electronic Science and Engineering, Kyoto University
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Armitage Robert
Department Of Electronics Science And Engineering Kyoto University
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Malhan Rajesh
Research Laboratories Denso Corp.
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Takeuchi Yuichi
Research Laboratories Denso Corp.
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Yoo Woo
Wafer Masters Inc.
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Yoo Woo
Department Of Electrical Engineering Kyoto University
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Yamashita Atsushi
Department Of Electrical Engineering Faculty Of Engineering Kyoto University:(present Address) Nec C
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Kimoto Tsunenobu
Department Of Electronics Science And Engineering Kyoto University
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Itoh A
Ricoh Co. Ltd. Miyagi Jpn
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Onojima Norio
Department Of Elecronic Science And Engineering Kyoto University
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Nakamura S
Department Of Electronic Science And Engineering Kyoto University
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Funato Mitsuru
Department Of Electronic Science And Engineering Kyoto University
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DANNO Katsunori
Department of Electronic Science and Engineering, Kyoto University
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Miyamae Nobuhiko
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Itoh A
Tokyo Inst. Technol. Tokyo Jpn
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Matsunami H
Department Of Electronic Science And Engineering Kyoto University
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Honda Shin-ichi
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Negoro Yuki
Department Of Electronic Science And Engineering Kyoto University
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Katayama Mitsuhiro
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Yamaji Kazuki
Department Of Electronic Science And Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electronics Science And Engineering Kyoto University
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Niwa Hiroki
Department Of Electronic Science And Engineering Kyoto University
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Yoo Woo
Wafer Masters, Inc.
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本多 信一
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Honda Shin‐ichi
Osaka Univ. Osaka Jpn
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Katayama Mitsuhiro
Osaka Univ. Osaka Jpn
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HONDA Shin-ichi
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osak
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KATAYAMA Mitsuhiro
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osak
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SUTO Hirofumi
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osak
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FUJII Shunjiro
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osak
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CHEN Yi
Department of Chemistry, Nanjing University
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Kobayashi Sota
Department Of Electronic Science And Engineering Kyoto University
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INOKO Fukuji
The University of Tokushima
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Honda Shinichi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Tanaka Naoki
Department of Gastroenterology, Shinshu University School of Medicine
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NODA Hiroshi
Department of Legal Medicine, Kinki University School of Medicine
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Suda Jun
Department Of Electronic Science And Engineering Kyoto University
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Suda Jun
Department Of Electronics Science And Engineering Kyoto University
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Inoko F
The University Of Tokushima
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Inoko Fukuji
Department Of Mechanical Engineering Tokushima University
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Tanaka N
Department Of Applied Biological Sciences Faculty Of Agriculture Saga University
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Shiomi Hiromu
Sixon Ltd.
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Hiyoshi Toru
Department Of Electronic Science And Engineering Kyoto University
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Kanemitsu Yoshihiko
Institute For Chemical Research Kyoto University
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Iwata Tatsuya
Department Of Frontier Materials Nagoya Institute Of Technology
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NOBORIO Masato
Department of Electronic Science and Engineering, Kyoto University
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INOUE NAOYA
Department of Surgery, Wakayama Red-cross Hospital
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OKAMOTO Kouichi
Department of Neurology, Gunma University School of Medicine
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Inoko Fukuji
Detartment Of Mechanical Engineering Tokushima University
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EBISUI Takahiro
Department of Mechanical Engineering, Tokushima University
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Ebisui Takahiro
Department Of Mechanical Engineering Tokushima University
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NEGORO Yuki
Department of Electronic Science and Engineering, Kyoto University
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KUJIME Noriyuki
Department of Mechanical Engineering, Tokushima University
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Nishino Hironori
Department of Electrical Engineering, Faculty of Engineering, Kyoto University
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Ueda Tetsuzo
Department of Electrical Engineering, Faculty of Engineering, Kyoto University
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ONOJIMA Norio
Department of Elecronic Science and Engineering, Kyoto University
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NAKAMURA Syun-ichi
Department of Electronic Science and Engineering, Kyoto University
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MIURA Mineo
Department of Electronic Science and Engineering, Kyoto University
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MATSUURA Hideharu
Department of Electronics, Osaka Electro-Communication University
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Kumagai Yoshinao
Institute Of Materials Science University Of Tsukuba
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Shimoyama Kenji
Mitsubishi Chemical Co.
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Inoko Fukuji
Department Of Mechanical Engineering Faculty Of Engineering Tokushima University
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Kawano Hiroaki
Department Cardiovascular Medicine Kumamoto University:division Of Intensive Care Unit Kumamoto Univ
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Chen Y
Department Of Electronic Science And Engineering Kyoto University
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YAGUCHI Seiji
Kobe Shipyard and Machinery Works, Mitsubishi Heavy Industries, Ltd.
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OHYAMA Naoki
Takasago Research and Development Center, Mitsubishi Heavy Industries, Ltd.
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HATAYAMA Tomoaki
Ion Engineering Research Institute Corporation
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YONEDA Tomoaki
Ion Engineering Research Institute Corporation
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NAKATA Toshitake
Ion Engineering Research Institute Corporation
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WATANABE Masanori
Ion Engineering Research Institute Corporation
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Kimoto Tsunenobu
Department Of Electronic Science And Engineering Kyolo University
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Noda Hiroshi
Department Of Animal Health Faculty Of Veterinary Medicine Rakuno Gakuen University
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Miura Mineo
Department Of Electronic Science And Engineering Kyoto University
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Inoue N
Kyoto Univ. Kyoto Jpn
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Ueda Tetsuzo
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Ohyama Naoki
Takasago Research And Development Center Mitsubishi Heavy Industries Ltd.
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Yaguchi Seiji
Kobe Shipyard And Machinery Works Mitsubishi Heavy Industries Ltd.
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Pensl Gerhard
Institute Of Applied Physics University Of Erlangen-nurnberg
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Kanzaki Yosuke
Department Of Electronic Science And Engineering Kyoto University
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MIYAMAE Nobuhiko
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osak
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YAMAGUCHI Makoto
Japan Society for Promotion of Machine Industry
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HASHIMOTO Kouichi
Department of Electronic Science and Engineering, Kyoto University
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Katayama M
Shin‐etsu Handotai Co. Ltd. Gunma Jpn
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Honda S
Nihon Univ. Koriyama Jpn
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Kujime Noriyuki
Department Of Mechanical Engineering Tokushima University
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Hatayama Tomoaki
Ion Engineering Research Institute Corporation:(present Address)nara Institute Of Science And Techno
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Matsunami Hiroyuki
Department Of Electronic Science And Engineering Kyoto University
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Nakata Toshitake
Ion Engineering Research Institute Co.
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Okamoto K
Department Of Advanced Materials Science And Engineering Faculty Of Engineering Yamaguchi University
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Saitoh Hiroaki
Department Of Electronic Science And Engineering Kyoto University
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Nakamura Syun-ichi
Department Of Electronic Science And Engineering Kyoto University
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Hashimoto Koichi
Department Of Biotechnology And Life Science Graduate School Of Engineering Tokyo University Of Agri
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Hashimoto Kouichi
Department Of Cellular Neurophysiology Graduate School Of Medical Science Kanazawa University
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Hashimoto Kouichi
Department Of Electronic Science And Engineering Kyoto University
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Namita Hideo
Mitsubishi Chemical Group Science And Technology Research Center Inc.
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Honda Shini-ichi
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Shimoyama Kenji
Mitsubishi Chemical Corporation
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Inoue Naoya
Department Of Electronic Science And Engineering Kyoto University
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Nagao Satoru
Mitsubishi Chemical Group Science And Technology Research Center Inc.
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Suto Hirofumi
Corporate Research & Development Center Toshiba Corporation
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Tomita Takuro
Department Of Ecosystem Engineering The University Of Tokushima
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Fujii Shunjiro
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U
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Yamaji Kazuki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Hayashi Yuichirou
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Matsuo Shigeki
Department Of Ecosystem Engineering Graduate School Of Engineering The University Of Tokushima
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Ishii Yasuhiro
Department Of Applied Protein Chemistry Faculty Of Agriculture Tokyo University Of Agriculture And T
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Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
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Okamoto Kouichi
Department Of Applied Physics Waseda University
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Okamoto Kouichi
Department Of Mechanical Engineering Tokushima University
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Nakano Yuki
Department Of Analytical Chemistry Faculty Of Pharmaceutical Sciences Hoshi University
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Noda Hiroshi
Department Of Hospital Pharmacy School Of Medicine University Of Occupational And Environmental Heal
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Hayashi Toshihiko
Department Of Biology Faculty Of Science Shizuoka University
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Ono Hidenori
Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology
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Hayashi Yuichirou
Department Of Electronic Science And Engineering Kyoto University
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Nishino Hironori
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Tanaka Naoki
Department Of Bio-molecular Engineering Kyoto Institute Of Technology
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Matsunami Hiroyuki
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electronic Science And Engineering Kyolo University
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Negoro Yuuki
Department Of Electronic Science And Engineering Kyoto University
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Matsuura Hideharu
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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Bessho Takeshi
Higashifuji Technical Center Toyota Motor Corporation
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OKUMURA Hironori
Department of Electronic Science and Engineering, Kyoto University
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KANEKO Mitsuaki
Department of Electronic Science and Engineering, Kyoto University
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DANNO Katsunori
Higashifuji Technical Center, Toyota Motor Corporation
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SAITOH Hiroaki
Higashifuji Technical Center, Toyota Motor Corporation
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SEKI Akinori
Higashifuji Technical Center, Toyota Motor Corporation
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SHIRAI Takayuki
Higashifuji Technical Center, Toyota Motor Corporation
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SUZUKI Hiroshi
Higashifuji Technical Center, Toyota Motor Corporation
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KAWAI Yoichiro
Higashifuji Technical Center, Toyota Motor Corporation
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Kimoto Tsunenobu
Kyoto Univ. Kyoto Jpn
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Katayama Mitsuhiro
Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka University
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Saitoh Hiroaki
Higashifuji Technical Center Toyota Motor Corporation
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Kawai Yoichiro
Higashifuji Technical Center Toyota Motor Corporation
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Danno Katsunori
Higashifuji Technical Center Toyota Motor Corporation
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Shirai Takayuki
Higashifuji Technical Center Toyota Motor Corporation
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Kato Masashi
Department Of Applied Biological Chemistry Faculty Of Agriculture Meijo University
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Seki Akinori
Higashifuji Technical Center Toyota Motor Corporation
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Inoko F
Department of Mechanical Engineering, Faculty of Engineering, Tokushima University
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Kawakami Yoichi
Department of Electronic Science and Engineering, Kyoto University
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Tomita Takuro
Department of Ecosystem Engineering, The University of Tokushima, Tokushima 770-8506, Japan
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SUDA Jun
Department of Electronics Science and Engineering, Kyoto University
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Suda Jun
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
著作論文
- Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
- Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
- Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
- Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
- Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
- Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
- Deep Interface States in SiO_2/p-type α-SiC Structure
- Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses
- Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
- High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
- High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
- Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
- Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
- High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
- Specular Surface Morphology of 4H-SiC Epilayers Grown on (112^^-0) Face
- Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation
- Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
- Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
- Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
- Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
- Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (1120) and (1100) Planes under Group-III-Rich Conditions
- Effects of Channel Mobility on SiC Power Metal-Oxide-Semicomductor Field Effect Transistor Perforrmance
- Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement
- Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
- Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers
- High-quality Epitaxial Growth of SiC and State-of-the-art Device Development
- Recent Progress in Epitaxial Growth of SiC for Power Devices
- Structure Analysis of ZrB_2(0001) Surface Prepared by ex situ HF Treatment
- Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)
- Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiC(1100)
- Origin of Etch Hillocks Formed on On-Axis SiC($000\bar{1}$) Surfaces by Molten KOH Etching
- Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
- Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth
- Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory
- Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices
- Enhancement of Carrier Lifetimes in n-Type 4H-SiC Epitaxial Layers by Improved Surface Passivation
- Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping
- Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal–Oxide–Semiconductor Field-Effect Transistors
- Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching
- In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face
- Nearly Ideal Current--Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
- Robust 4H–SiC pn Diodes Fabricated using ($11\bar{2}0$) Face
- Surface Morphologies of 4H-SiC($11\bar{2}0$) and ($1\bar{1}00$) Treated by High-Temperature Gas Etching
- Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing
- Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition
- Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities (Special Issue : Solid State Devices and Materials (2))
- Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering
- AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy
- Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
- 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300 °C
- Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals
- 21.7kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension
- Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
- 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300℃
- Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy
- Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
- Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and ($11\bar{2}0$) Formed by N2O Oxidation
- Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
- Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing
- Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
- Selective Embedded Growth of 4H–SiC Trenches in 4H–SiC(0001) Substrates Using Carbon Mask
- Systematic Investigation of $c$-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates
- Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells
- High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H–SiC Epilayers
- Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)
- Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy
- Determination of Phase Diagram of Electron--Hole Systems in 4H-SiC
- Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates
- Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation
- Source of surface morphological defects formed on 4H-SiC homoepitaxial films
- Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier Lifetime
- Structure Analysis of ZrB2(0001) Surface Prepared by ex situ HF Treatment
- Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates
- High-Sensitivity Analysis of $\mathrm{Z}_{1}$ Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
- Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC (0001)