Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth

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概要

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• 300-nm-thick AlN layers were grown directly on 6H-SiC(0001) with six Si--C bilayer-height (1.5 nm) steps by rf-plasma-assisted molecular-beam epitaxy (MBE). To avoid unintentional active-nitrogen exposure, AlN was grown just after the nitrogen plasma ignition. By combining optimized Ga pre-deposition and no active-nitrogen exposure, layer-by-layer growth was realized from the first layer of AlN. Screw-type and edge-type threading dislocation densities in the AlN layer were reduced to $6\times 10^{4}$ and $4\times 10^{8}$ cm-2, respectively. Most of the edge-type dislocations were located at the step edge of the SiC substrate. The dislocation density of the AlN grown on the terrace of the SiC substrate was as low as $8\times 10^{7}$ cm-2.

• 2011-02-25

著者

• Suda Jun

  Department Of Electrical Engineering Kushiro National College Of Technology

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Okumura Hironori

  Department Of Electronic Science And Engineering Kyoto University

• Okumura Hironori

  Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

• Kimoto Tsunenobu

  Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

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