High-Quality AlN by Initial Layer-by-Layer Growth on Surface-Controlled 4H–SiC(0001) Substrate

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概要

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• The initial layer-by-layer growth of AlN was realized on a surface-controlled 4H–SiC(0001) substrate using plasma-assisted molecular-beam epitaxy (PA-MBE). To achieve initial two-dimensional (2D) growth, the control of SiC surface chemistry is very important as well as that of surface flatness. The effect of SiC preparation on the surface structure and chemical composition was investigated by using reflection high-energy electron diffraction (RHEED) and in situ X-ray photoelectron spectroscopy (XPS). The initial growth mode of AlN was strongly influenced by the removal of residual oxygen atoms from the SiC surface. Symmetrical and asymmetrical X-ray rocking curve (XRC) measurements revealed that initial 2D growth was essential to obtain the excellent crystalline quality of AlN layer.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2003-05-01

著者

• Suda Jun

  Department Of Electrical Engineering Kushiro National College Of Technology

• Onojima Norio

  Department Of Elecronic Science And Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• Suda Jun

  Department of Electronic Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan

• Matsunami Hiroyuki

  Department of Electronic Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan

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