Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping
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概要
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Dislocations in 4H-SiC epilayers were imaged nondestructively by means of micro photoluminescence (μ-PL) mapping at room temperature. The one-to-one correspondence between the individual dislocations and the μ-PL mapping contrast has been consistently obtained. By analyzing the reduction of the intensity in the μ-PL mapping image performed at 390 nm (near band-edge emission), we were able to distinguish threading screw dislocations and threading edge dislocations. Furthermore, it was found that a basal plane dislocation dissociates into a single Shockley stacking fault during the measurement.
- 2010-09-25
著者
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Feng Gan
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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