Origin of Etch Hillocks Formed on On-Axis SiC($000\bar{1}$) Surfaces by Molten KOH Etching
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概要
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Molten KOH etching of 6H- and 4H-SiC{0001} on-axis substrates was investigated. After molten KOH etching, etch pits originating from threading dislocations (TDs) and basal-plane dislocations (BPDs) were observed on (0001) surfaces. On the other hand, large and small hillocks were observed on ($000\bar{1}$) surfaces. The etch hillocks consist of SiC, indicating slower etching at TDs. By comparing the (0001) side and ($000\bar{1}$) side of the same substrate, it was found that large hillocks correspond to edge-type TDs, while small hillocks correspond to screw-type TDs.
- 2011-03-25
著者
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Shoji Haruki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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