Systematic Investigation of $c$-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates

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概要

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• High-resolution X-ray diffraction measurements of GaN and AlGaN grown on 4H- and 6H-SiC(0001) vicinal substrates with misorientation angles of up to 9° are presented. Growth of (Al)GaN was carried out by plasma-assisted molecular beam epitaxy. The $c$-axis tilt, i.e., inclination of the (Al)GaN $c$-axis relative to that of SiC, was systematically investigated. The inclination angle clearly depended on the SiC substrate misorientation angle, while it was independent of the (Al)GaN growth temperature, SiC polytype, and substrate misorientation direction. The behavior observed for both GaN and AlGaN is in excellent agreement with the model proposed previously by Nagai for the InGaAs/GaAs system.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-02-25

著者

• Suda Jun

  Department Of Electrical Engineering Kushiro National College Of Technology

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Nakano Yuki

  Department Of Analytical Chemistry Faculty Of Pharmaceutical Sciences Hoshi University

• Nakano Yuki

  Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

• Miyake Hiroki

  Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

• Amari Koichi

  Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

• MIYAKE Hiroki

  Department of Applied Pharmacology, Kyoto College of Pharmacy

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