Selective Area Growth of Cubic GaN on 3C-SiC (001) by Metalorganic Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Selective area growth (SAG) of cubic GaN (c-GaN) was performed by metalorganic molecular beam epitaxy (MOMBE). The substrates used in this study were vapor phase epitaxy (VPE)-grown 3C-SiC on Si (001) 4°-off substrates. As a mask, 70-nm-thick SiO_2 was formed by thermal oxidation of 3C-SiC and patterned by photolithography or focused ion beam (FIB) etching. GaN was grown on these patterned 3C-SiC substrates without a low-temperature-grown (LT) buffer layer. At a high growth temperature (850℃), growth of GaN did not occur even on a 3C-SiC surface. At a low temperature (800℃), c-Gan was epitaxially grown on a 3C-SiC surface, while polycrystalline GaN (poly-GaN) was grown on the SiO_2-masked region. Growth of poly-GaN on the mask was suppressed by optimizing the growth temperature and V/III supply ratio. The possibility of positioning control for c-GaN microcrystals is also presented.
- 社団法人応用物理学会の論文
- 2000-11-01
著者
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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KUROBE Tatsuro
Department of Electronic Science and Engineering, Kyoto University
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Kurobe Tatsuro
Department Of Electronic Science And Engineering Kyoto University
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Nakamura Shigeru
Department Of Electronic Science And Engineering Kyoto University
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Nakamura Shigeru
Department Of Applied Physics Tokyo Institute Of Technology:central Laboratory Hitachi Ltd.
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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