Nearly Ideal Current--Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
スポンサーリンク
概要
- 論文の詳細を見る
The current--voltage characteristics of Schottky barrier diodes formed on GaN(0001) free-standing substrates with net donor concentrations of $7.6\times 10^{15}$--$1.4\times 10^{17}$ cm-3 are discussed. The substrates were grown by hydride vapor phase epitaxy. Ni Schottky contacts were directly formed on chemical--mechanical-polished Ga-polar faces of the substrates. Nearly ideal characteristics for both directions were obtained. The ideality factors for forward characteristics are 1.02--1.05, very close to unity. The reverse characteristics agree well with calculations based on thermionic-field emission theory without any fitting parameter.
- Japan Society of Applied Physicsの論文
- 2010-10-25
著者
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Kimoto Tsunenobu
Department Of Electronic Science And Engineering Kyoto University
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Shimoyama Kenji
Mitsubishi Chemical Co.
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Namita Hideo
Mitsubishi Chemical Group Science And Technology Research Center Inc.
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Shimoyama Kenji
Mitsubishi Chemical Corporation
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Nagao Satoru
Mitsubishi Chemical Group Science And Technology Research Center Inc.
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Yamaji Kazuki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Hayashi Yuichirou
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Yamaji Kazuki
Department Of Electronic Science And Engineering Kyoto University
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Hayashi Yuichirou
Department Of Electronic Science And Engineering Kyoto University
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