Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy
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- Nearly Ideal Current--Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
- Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC(0001) Substrate by Molecular-Beam Epitaxy (Special Issue : Solid State Devices and Materials (1))
- Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy
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