In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face
スポンサーリンク
概要
- 論文の詳細を見る
The thermal decomposition and hydrogen etching of a 6H-SiC(0001) Si-face were directly monitored using an in situ gravimetric monitoring system. The monitoring of the weight change of the 6H-SiC Si-face using this system clarified the dependences of the thermal decomposition and hydrogen etching rates on the substrate temperature. Although the thermal decomposition of the 6H-SiC Si-face above 1400 °C generated a graphite layer since only the Si atom directly desorbs from the surface, the etching of the 6H-SiC Si-face by hydrogen did not form this layer, and both Si and C atoms react with hydrogen. Moreover, the surface reaction of the 6H-SiC Si face with H2 and the resultant surface morphology were found to change at approximately 1250 °C.
- 2009-09-25
著者
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Kumagai Yoshinao
Institute Of Materials Science University Of Tsukuba
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Ishii Yasuhiro
Department Of Applied Protein Chemistry Faculty Of Agriculture Tokyo University Of Agriculture And T
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Okumura Hironori
Department Of Electronic Science And Engineering Kyoto University
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Koukitu Akinori
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Koukitu Akinori
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Akiyama Kazuhiro
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Akiyama Kazuhiro
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Murakami Hisashi
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Murakami Hisashi
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Abe Sohei
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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KUMAGAI Yoshinao
Institute of Material Science, University of Tsukuba
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Kumagai Yoshinao
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Ishii Yasuhiro
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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