In situ Gravimetric Monitoring of Decomposition Rate on Surface of ($10\bar{1}2$) $R$-Plane Sapphire for High-Temperature Growth of Nonpolar AlN
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概要
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The thermal stability and reaction with H2 of the surface of a ($10\bar{1}2$) $R$-plane sapphire substrate at high temperatures were investigated using an in situ gravimetric monitoring system. Although the $R$-plane sapphire surface was stable up to 1400 °C in an inert carrier gas, decomposition started at 1200 °C in H2 carrier gas. In addition, the activation energy for the decomposition of $R$-plane sapphire in H2 carrier gas changed at approximately 1300 °C, which indicates that the rate-limiting reaction for the decomposition of the $R$-plane sapphire substrate shifts near 1300 °C. These results agree with those for the stability of the $C$-plane sapphire substrate, as described previously. However, it was found that decomposition rate of the $R$-plane sapphire substrate was significantly greater than that for the $C$-plane substrate. The relationship between the decomposition rate and the surface orientation of sapphire and detailed mechanisms for the decomposition of $R$- and $C$-plane sapphire in H2 carrier gas are discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-05-25
著者
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Kumagai Yoshinao
Institute Of Materials Science University Of Tsukuba
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Koukitu Akinori
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Akiyama Kazuhiro
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Murakami Hisashi
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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KUMAGAI Yoshinao
Institute of Material Science, University of Tsukuba
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Kumagai Yoshinao
Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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