Observation of HCl- and HF-Treated GaAs Surfaces by Measuring Contact Angles of Water Droplets
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-08-15
著者
-
OKUYAMA Sumio
Department of Electrical and Information Engineering, Faculty of Engineering, Yamagata University
-
MATSUSHITA Koichi
Department of Electrical and Information Engineering, Faculty of Engineering, Yamagata University
-
KUMAGAI Yasuji
Department of Electrical and Information Engineering, Faculty of Engineering, Yamagata University
-
MIYAZAKI Shuji
Department of Electrical and Electronic Engineering, Utsunomiya University
-
Okuyama S
Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University
-
Okuyama Sumio
Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University
-
Miyazaki Shuji
Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University
-
Kumagai Y
Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University
-
Kumagai Y
Hitachi Ltd. Ibaraki Jpn
-
Kumagai Yoshinao
Institute Of Materials Science University Of Tsukuba
-
Matsushita Koichi
Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University
-
Miyazaki Shuji
Department Of Applied Mathematics Faculty Of Engineering Hiroshima University
関連論文
- Hydrogen Gas Sensing Using a Pd-Coated Cantilever
- Improved Response Time of Al-Al_2O_3-Pd Tunnel Diode Hydrogen Gas Sensor
- Pd/Ni-Al_2O_3-Al Tunnel Diode as High-Concentration-Hydrogen Gas Sensor
- Current vs Voltage Characteristics of Al-Al_2O_3-Pd Tunnel Junction Hydrogen Sensor
- Growth of MnGeP_2 Thin Films by Molecular Beam Epitaxy
- Electron Bunch Acceleration by an Intense Laser Pulse with a Plasma Separator (特集:平成16年基礎・材料・共通部門大会)
- Micro Electron Bunch Acceleration and Trapping by Intense Short Laser Pulse in Vacuum
- 22aYB-8 GeV Electron Bunch Generated by Intense Pulsed Lasers
- Heavily Te-Doped GaAs Layers by Plasma-Assisted Epitaxy
- Low Temperature Thermal Nitridation of GaAs Surfaces
- Gallium Oxide Film by Anodic Oxidization of Gallium
- Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties
- Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (000^^1) Surfaces Using Freestanding GaN : Semiconductors
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
- Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs(111)A and(111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
- Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
- Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
- 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
- Stability of Si(111)√×√R30°-B Surface in Air
- Comparison of Planar to Columnar Transformation of PtSi Layers on Si(001) and Si(111) Substrates in the Si Capping Layer Growth Process
- Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
- Influence of Boron Adsorption over Si(111) Surface on Si Molecular Beam Epitaxial Growth Studied by Reflection High-Energy Electron Diffraction
- Temperature Dependence of Boron Adsorption during HBO_2 Irradiation on Si(111) Surface Evaluated by Reflection High-Energy Electron Diffraction
- Formation of β-FeSi_2 Layers on Si(001) Substrates
- Influence of Crystal-Originated "Particle" Microstructure on Silicon Wafers on Gate Oxide Integrity
- Efficiency of Boron Getterimg for Iron Irmpurities in p/p^+ Epitaxial Silicon Wafers
- Microstructure Observation of "Crystal-Originated Particles" on Silicon Wafers
- Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
- Promotion of High-T_c Phase in Te-Doped (Bi, Pb)_2Sr_2Ca_2Cu_3O_y Superconductors Prepared by the Melt-Quenching Method
- On the Formation of High-T_c Phase in Mo-Doped (Bi, Pb)_2Sr_2Ca_2Cu_3O_y Superconductors
- Effect of Low-Temperature Annealing on the Coupling at Grain Boundaries in Sb-Doped (Bi, Pb)_2Sr_2Ca_2Cu_3O_y Superconductors
- Effect of Sb Addition on the Formation of High-T_c Phase in the Bi-Pb-Sr-Ca-Cu-O Ceramics
- Low-Temperature Formation of the PtSi Layer by Codeposition of Pt and Si in a Molecular Beam Epitaxy System
- Influence of the Surface Condition on the Thermal Relaxation of Strained Side Molecular Beam Epitaxy Layers
- Study of Pulse Laser Assisted Metalorganic Vapor Phase Epitaxy of InGaN with Large Indium Mole Fraction
- Hydrofluoric-Treated GaAs Surfaces Analyzed by Contact Angle Measurement and Auger Electron Spectroscopy
- Observation of HCl- and HF-Treated GaAs Surfaces by Measuring Contact Angles of Water Droplets
- Reflection High-Energy Electron Diffraction Intensity Oscillations during Si MBE Growth on HF-Treated Si(111) Surface
- Superconducting Properties of Bi-Pb-Sr-Ca-Cu-O Ceramics Prepared by the Melt-Quenching Method
- Preparation of High-T_c Superconducting Bi-Pb-Sr-Ca-Cu-O Ceramics by the Melt Quenching Method : Electrical Properties of Condensed Matter
- Effect of Mg Addition on Superconducting Properties of Ba-Y-Cu-O Ceramics Prepared by the Melt Quenching Method : Electrical Properties of Condensed Matter
- Effects of Annealing Conditions on Superconducting Properties of BiCaSrCu_2O_x Ceramics Prepared by the Melt Quenching Method : Electrical Properties of Condensed Matter
- On the New Substrate Materials for High-T_c Superconducting Ba-Y-Cu-O Thin Films : Electrical Properties of Condensed Matter
- On the Reactions of Quenched BaYCuO Powders with Various Materials : Electrical Properties of Condensed Matter
- High-T_c Superconducting Glass Ceramics Based on the Bi-Ca-Sr-Cu-O System : Electrical Properties of Condensed Matter
- Preparation of High-T_c Superconducting Bi-Ca-Sr-Cu-O Ceramics by the Melt Quenching Method : Electrical Properties of Condensed Matter
- Crystalline Phases in Superconductor Ba-Y-Cu-O with High T_c Prepared by Melting Method
- Liquid Quenched Superconductor Ba-Y-Cu-O with T_=88 K and AC Josephson Effect at 77 K
- Influence of Fe Contamination in Czochralski-Grown Silicon Single Crystals on LSI-Yield Related Crystal Quality Characteristics
- Surface State Density of Evaporated SiO-Te MIS Structure
- Electrochemical Intercalation of Organic Molecules into Thin Film of Layered Oxide MoO_3
- In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face
- Effect of Partially-Ionized Vapor on Epitaxial Growth of Te Thin Films
- Recrystallization of Te Films by Hot-Wire Zone-Melting
- Epitaxial and Amorphous-Crystalline Phase Transition Growth of Evaporated Te Films
- Low Temperature Epitaxial Growth of Highly-Conductive ZnSe Layers in Mixed Plasma of Hydrogen and Hydrogen Chloride
- On-off Intermittency in a Four-Dimensional Poincare Map
- Formation of β-FeSi 2 Layers on Si(001) Substrates
- In situ Gravimetric Monitoring of Decomposition Rate on Surface of ($10\bar{1}2$) $R$-Plane Sapphire for High-Temperature Growth of Nonpolar AlN
- Flow characteristics of a coal-oil-water mixture prepared by disintegration of de-ashed coal agglomerates